发明授权
- 专利标题: Low power latch sense amplifier
- 专利标题(中): 低功率锁存读出放大器
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申请号: US10259489申请日: 2002-09-30
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公开(公告)号: US06717444B2公开(公告)日: 2004-04-06
- 发明人: Hsiao-Ming Lin , Nien-Chao Yang
- 申请人: Hsiao-Ming Lin , Nien-Chao Yang
- 优先权: TW91100272A 20020110
- 主分类号: G01R1900
- IPC分类号: G01R1900
摘要:
A low power latch sense amplifier for electrically being coupled to a bit line of a memory cell array is disclosed. The low power latch sense amplifier comprises a common gate sense amplifier and an activated latch register. The common gate sense amplifier comprising a current source and a biased metal-oxide semiconductor is applied for sensing the current of the bit line. The current source and the biased MOS are coupled to a first node, and the common gate sense amplifier outputs a sensing signal at the first node. The activated latch register comprises a first clock signal-synchronized inverter which includes a first inverter and a first switch. The first inverter responds to the sensing signal, and the first inverter outputs a first inverter output signal. The first switch is controlled by a first set of control signal, and the first inverter output signal is corresponding to the sensing signal when the first switch is turned on.
公开/授权文献
- US20030128055A1 Low power latch sense amplifier 公开/授权日:2003-07-10
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