发明授权
US06720204B2 Method of using hydrogen plasma to pre-clean copper surfaces during Cu/Cu or Cu/metal bonding
有权
在Cu / Cu或Cu /金属接合期间使用氢等离子体预清洁铜表面的方法
- 专利标题： Method of using hydrogen plasma to pre-clean copper surfaces during Cu/Cu or Cu/metal bonding
- 专利标题（中）： 在Cu / Cu或Cu /金属接合期间使用氢等离子体预清洁铜表面的方法
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申请号： US10120836申请日： 2002-04-11
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公开(公告)号： US06720204B2公开(公告)日： 2004-04-13
- 发明人: John Leonard Sudijono , Yakub Aliyu , Mei Sheng Zhou , Simon Chooi , Subhash Gupta , Sudipto Ranendra Roy , Paul Kwok Keung Ho , Yi Xu
- 申请人： John Leonard Sudijono , Yakub Aliyu , Mei Sheng Zhou , Simon Chooi , Subhash Gupta , Sudipto Ranendra Roy , Paul Kwok Keung Ho , Yi Xu
- 主分类号： H01L2144
- IPC分类号： H01L2144
摘要：
A method of bonding a wire to a metal bonding pad, comprising the following steps. A semiconductor die structure having an exposed metal bonding pad within a chamber is provided. The bonding pad has an upper surface. A hydrogen-plasma is produced within the chamber from a plasma source. The metal bonding pad is pre-cleaned and passivated with the hydrogen-plasma to remove any metal oxide formed on the metal bonding pad upper surface. A wire is then bonded to the passivated metal bonding pad.
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