发明授权
US06721232B2 Semiconductor device having phase error improved DLL circuit mounted thereon 失效
具有安装在其上的相位误差改善的DLL电路的半导体器件

  • 专利标题: Semiconductor device having phase error improved DLL circuit mounted thereon
  • 专利标题(中): 具有安装在其上的相位误差改善的DLL电路的半导体器件
  • 申请号: US10172908
    申请日: 2002-06-18
  • 公开(公告)号: US06721232B2
    公开(公告)日: 2004-04-13
  • 发明人: Yasuhiro Kashiwazaki
  • 申请人: Yasuhiro Kashiwazaki
  • 优先权: JP2001-386430 20011219
  • 主分类号: G11C800
  • IPC分类号: G11C800
Semiconductor device having phase error improved DLL circuit mounted thereon
摘要:
Two delay lines included in a DLL circuit receive clock signals complementary to each other to output complementary clock signals CLKP and CLKN for data output. A power supply generation circuit applying a power supply to the two delay lines is arranged at an equivalent position from the two delay line. An equal potential is supplied to the two delay lines by, for example, setting lengths of two power supply lines from a branch point equal to each other. By doing so, delay time of one delay line can be set equal to delay time of the other delay line and a phase error between clock signals CLKP and CLKN can be reduced. Therefore, a semiconductor device on which the DLL circuit having the improved phase error is mounted can be provided.
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