Invention Grant
- Patent Title: Nonvolatile semiconductor memory unit
- Patent Title (中): 非易失性半导体存储单元
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Application No.: US10281249Application Date: 2002-10-28
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Publication No.: US06724678B2Publication Date: 2004-04-20
- Inventor: Yoshimasa Yoshimura
- Applicant: Yoshimasa Yoshimura
- Priority: JP2002-122543 20020424
- Main IPC: G11C700
- IPC: G11C700

Abstract:
A nonvolatile semiconductor memory unit which is provided with a nonvolatile semiconductor memory and a controller for performing a read operation, a write operation and an erase operation on the nonvolatile semiconductor memory unit, including an external power source which derives its supply of electric power from outside, an internal power source which derives its supply of electric power from a secondary battery and is connected to the nonvolatile semiconductor memory and the controller, a voltage detecting circuit for detecting a voltage of the external power source and a switching circuit which is provided between the external power source and the internal power source and is subjected to on-off control by an output of the voltage detecting circuit so as to enable and disable the external power source, respectively.
Public/Granted literature
- US20030202379A1 Nonvolatile semiconductor memory unit Public/Granted day:2003-10-30
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