发明授权
- 专利标题： Field emission device and method of fabricating the same
- 专利标题（中）： 场发射装置及其制造方法
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申请号： US10160413申请日： 2002-05-30
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公开(公告)号： US06729923B2公开(公告)日： 2004-05-04
- 发明人: Seong Deok Ahn , Jin Ho Lee , Kyoung Ik Cho
- 申请人： Seong Deok Ahn , Jin Ho Lee , Kyoung Ik Cho
- 优先权： KR2001-86836 20011228
- 主分类号： H01L2100
- IPC分类号： H01L2100
摘要：
The present invention relates to a field emission device and a method of fabricating the same. The method includes forming a hole having a nanometer size using silicon semiconductor process and then forming an emitter within the hole to form a field emission device. Therefore, the present invention can reduce the driving voltage and thus lower the power consumption.
公开/授权文献
- US20030122466A1 Field emission device and method of fabricating the same 公开/授权日：2003-07-03
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