发明授权
US06730618B2 Low k dielectric materials with inherent copper ion migration barrier
失效
具有固有铜离子迁移屏障的低k电介质材料
- 专利标题： Low k dielectric materials with inherent copper ion migration barrier
- 专利标题（中）： 具有固有铜离子迁移屏障的低k电介质材料
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申请号： US10137009申请日： 2002-05-01
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公开(公告)号： US06730618B2公开(公告)日： 2004-05-04
- 发明人: Stephan Alan Cohen , Claudius Feger , Jeffrey Curtis Hedrick , Jane Margaret Shaw
- 申请人： Stephan Alan Cohen , Claudius Feger , Jeffrey Curtis Hedrick , Jane Margaret Shaw
- 主分类号： H01L2131
- IPC分类号： H01L2131
摘要：
An interlayer dielectric for preventing Cu ion migration in semiconductor structure containing a Cu region is provided. The interlayer dielectric of the present invention comprises a dielectric material that has a dielectric constant of 3.0 or less and an additive which is highly-capable of binding Cu ions, yet is soluble in the dielectric material. The presence of the additive in the low k dielectric allows for the elimination of conventional inorganic barrier materials such as SiO2 or Si3N4.
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