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    Solid state extension method
    3.
    发明授权
    Solid state extension method 失效
    固态扩展方法

    公开(公告)号：US6017682A

    公开(公告)日：2000-01-25

    申请号：US979382

    申请日：1997-11-26

    申请人： Marie Angelopoulos ,  Claudius Feger ,  Jeffrey Donald Gelorme ,  Jane Margaret Shaw

    发明人： Marie Angelopoulos ,  Claudius Feger ,  Jeffrey Donald Gelorme ,  Jane Margaret Shaw

    IPC分类号： G03F7/004 ,  G03F7/038 ,  G03F7/40

    CPC分类号： G03F7/0387 ,  G03F7/0045 ,  Y10S430/143 ,  Y10S430/167

    摘要： A solid state chain extension method provides for the formation of a solid state film comprised of a high molecular weight polymer by chain extending a deblocked Lewis base with Lewis acid oligomers while the reactants are in a solid state form. In one embodiment, a negative resist is prepared by selectively exposing regions of the solid state film. The Lewis base is deblocked at the exposed regions by a suitable deblocking means. The Lewis acid oligomers and the deblocked Lewis base chain extend at the exposed regions. Development of the film removes the non-polymerized reactants. Optionally, the Lewis acid oligomers, when radiation-cross-linking, are cross-linked with one another prior to deblocking the Lewis base to form a negative resist. The cross-linked oligomers polymerize with the subsequently deblocked base to provide a high molecular weight polymer film. In an alternative embodiment, a positive resist is used by degrading and removing photo-sensitive Lewis acid oligomers using selective exposure lithography techniques and, subsequently, deblocking the Lewis base and chain extending the remaining oligomers with the deblocked Lewis base at the unexposed regions.

    摘要翻译： 固态链延伸方法提供了通过将路易斯酸低聚物链路延伸解链路易斯碱同时反应物呈固态形式形成由高分子量聚合物构成的固态膜。 在一个实施方案中，通过选择性地暴露固态膜的区域来制备负性抗蚀剂。 路易斯碱通过合适的去块装置在暴露区域解封。 路易斯酸低聚物和解封的路易斯碱基链在暴露的区域延伸。 膜的开发除去未聚合的反应物。 任选地，当辐射交联时，路易斯酸低聚物在将路易斯碱解封以形成负性抗蚀剂之前彼此交联。 交联的低聚物与随后的解封底物聚合以提供高分子量聚合物膜。 在替代实施方案中，通过使用选择性曝光光刻技术降解和除去光敏路易斯酸低聚物，然后使路易斯碱和链在未曝光区域上与解封的路易斯碱扩展剩余的低聚物链，使用正性抗蚀剂。

    Chip interconnect wiring structure with low dielectric constant insulator and methods for fabricating the same
    5.
    发明授权
    Chip interconnect wiring structure with low dielectric constant insulator and methods for fabricating the same 失效
    具有低介电常数绝缘体的芯片互连布线结构及其制造方法

    公开(公告)号：US06184121B2

    公开(公告)日：2001-02-06

    申请号：US09112919

    申请日：1998-07-09

    申请人： Leena P. Buchwalter ,  Alessandro Cesare Callegari ,  Stephan Alan Cohen ,  Teresita Ordonez Graham ,  John P. Hummel ,  Christopher V. Jahnes ,  Sampath Purushothaman ,  Katherine Lynn Saenger ,  Jane Margaret Shaw

    发明人： Leena P. Buchwalter ,  Alessandro Cesare Callegari ,  Stephan Alan Cohen ,  Teresita Ordonez Graham ,  John P. Hummel ,  Christopher V. Jahnes ,  Sampath Purushothaman ,  Katherine Lynn Saenger ,  Jane Margaret Shaw

    IPC分类号： H01L214763

    CPC分类号： H01L23/53228 ,  H01L21/7682 ,  H01L23/5222 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method to achieve a very low effective dielectric constant in high performance back end of the line chip interconnect wiring and the resulting multilayer structure are disclosed. The process involves fabricating the multilayer interconnect wiring structure by methods and materials currently known in the state of the art of semiconductor processing; removing the intralevel dielectric between the adjacent metal features by a suitable etching process; applying a thin passivation coating over the exposed etched structure; annealing the etched structure to remove plasma damage; laminating an insulating cover layer to the top surface of the passivated metal features; optionally depositing an insulating environmental barrier layer on top of the cover layer; etching vias in the environmental barrier layer, cover layer and the thin passivation layer for terminal pad contacts; and completing the device by fabricating terminal input/output pads. The method obviates issues such as processability and thermal stability associated with low dielectric constant materials by avoiding their use. Since air, which has the lowest dielectric constant, is used as the intralevel dielectric the structure created by this method would possess a very low capacitance and hence fast propagation speeds. Such structure is ideally suitable for high density interconnects required in high performance microelectronic device chips.

    摘要翻译： 公开了一种在线芯片互连布线和所得多层结构的高性能后端中实现非常低的有效介电常数的方法。 该方法涉及通过目前在半导体处理领域中已知的方法和材料制造多层互连布线结构; 通过合适的蚀刻工艺去除相邻金属特征之间的层间电介质; 在暴露的蚀刻结构上施加薄的钝化涂层; 退火蚀刻结构以去除等离子体损伤; 将绝缘覆盖层层压到钝化金属特征的顶表面; 可选地在覆盖层的顶部上沉积绝缘环境阻挡层; 在环境阻挡层，覆盖层和用于端子焊盘触点的薄钝化层中蚀刻通孔; 并通过制造端子输入/输出焊盘来完成该器件。 该方法通过避免其使用而消除了与低介电常数材料相关的加工性和热稳定性等问题。 由于具有最低介电常数的空气被用作体内电介质，所以通过该方法产生的结构将具有非常低的电容并因此具有快速的传播速度。 这种结构理想地适用于高性能微电子器件芯片所需的高密度互连。

    Vibrational methods of deaggregation of electrically conductive polymers and precursors thereof
    9.
    发明授权
    Vibrational methods of deaggregation of electrically conductive polymers and precursors thereof 有权
    导电聚合物及其前体解聚的振动方法

    公开(公告)号：US6099756A

    公开(公告)日：2000-08-08

    申请号：US43623

    申请日：1998-10-02

    申请人： Marie Angelopoulos ,  Richard Anthony DiPietro ,  Jane Margaret Shaw

    发明人： Marie Angelopoulos ,  Richard Anthony DiPietro ,  Jane Margaret Shaw

    IPC分类号： C08G61/12 ,  C08G73/02 ,  H01B1/12

    CPC分类号： C08G61/12 ,  C08G61/122 ,  C08G73/0266 ,  H01B1/128

    摘要： The instant invention is drawn vibrational methods of deaggregating electrically conductive polymers. Said methods include the steps of:I) providing an intrinsically conductive polymer comprising a specific morphology;II) determining by experimental or theoretical means a desired degree of aggregation for said intrinsically conductive polymer;III) agitating said intrinsically conductive polymer by a method selected from the group consisting of ultrasound, vibration, shear mixing and cavitation, said agitation being performed at a rate sufficient to achieve the determined degree of aggregation.

    摘要翻译： PCT No.PCT / US97 / 13377 Sec。 371日期：1998年10月2日 102（e）1998年10月2日PCT PCT 1997年7月24日PCT公布。 公开号WO98 / 05043 日期1998年2月5日本发明是拉伸导电聚合物解聚的振动方法。 所述方法包括以下步骤：I）提供包含特定形态的固有导电聚合物; II）通过实验或理论手段确定所述固有导电聚合物所需的聚集度; III）通过选自超声，振动，剪切混合和空化的方法搅拌所述固有导电聚合物，所述搅拌以足以达到确定的聚集度的速率进行。

    Radiation control system
    10.
    发明授权
    Radiation control system 失效
    辐射控制系统

    公开(公告)号：US5837978A

    公开(公告)日：1998-11-17

    申请号：US770213

    申请日：1996-12-19

    申请人： Michael Hatzakis, Jr. ,  David Andrew Lewis ,  Jane Margaret Shaw

    发明人： Michael Hatzakis, Jr. ,  David Andrew Lewis ,  Jane Margaret Shaw

    IPC分类号： B01J19/12 ,  G01N22/00 ,  H05B6/68 ,  H05B6/80 ,  H05K1/03 ,  H05K3/46 ,  H05B6/66

    CPC分类号： H05B6/705 ,  B01J19/126 ,  G01N22/00 ,  H05B6/68 ,  B01J2219/00191 ,  B01J2219/1215 ,  H05K1/0346 ,  H05K3/4644 ,  Y02B40/143

    摘要： A control system for a blind microwave radiation tool a workpiece is described. The controlled system automatically tunes the cavity containing the workpiece. The control system automatically controls the temperature of the workpiece according to a predetermined temperature versus time schedule. Control system automatically determines when the workpiece has reached a particular predetermined physical condition. To achieve these results the control system automatically monitors applied power, reflected power or current temperature and automatically controls the microwave antennae location and the cavity short location in order to maintain the cavity in resonance and to determine when to exit without operator intervention. Control system can run on a small computer and is useful for automatically curing polyamic acid to polyimide to a predetermined percent cure automatically without operator intervention.

    摘要翻译： 描述了用于盲微波辐射工具的工件的控制系统。 受控系统自动调谐包含工件的腔体。 控制系统根据预定的温度对时间表自动控制工件的温度。 控制系统自动确定工件何时达到特定的预定物理状态。 为了实现这些结果，控制系统自动监视所施加的功率，反射功率或当前温度，并自动控制微波天线位置和空腔短位置，以便保持谐振腔，并确定何时在没有操作员干预的情况下退出。 控制系统可以在小型计算机上运行，​​并且可用于自动将聚酰胺酸聚酰亚胺固化至预定百分比固化，无需操作员干预。