发明授权
- 专利标题： Ferroelectric film and semiconductor device
- 专利标题（中）： 铁电薄膜和半导体器件
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申请号： US10287824申请日： 2002-11-05
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公开(公告)号： US06734456B2公开(公告)日： 2004-05-11
- 发明人: Keisuke Tanaka , Toru Nasu , Masamichi Azuma
- 申请人： Keisuke Tanaka , Toru Nasu , Masamichi Azuma
- 优先权： JP2001-350078 20011115; JP2001-350089 20011115
- 主分类号： H01L2976
- IPC分类号： H01L2976
摘要：
The ferroelectric film of the invention is made from a ferroelectric material represented by a general formula, Bi4−x+yAxTi3O12 or (Bi4−x+yAxTi3O12)z+(DBi2E2O9)1−z, wherein A is an element selected from the group consisting of La, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu and V; D is an element selected from the group consisting of Sr, Ba, Ca, Bi, Cd, Pb and La; E is an element selected from the group consisting of Ti, Ta, Hf, W, Nb, Zr and Cr; and 0≦x≦2, 0
公开/授权文献
- US20030151078A1 Ferroelectric film and semiconductor device 公开/授权日：2003-08-14
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