发明授权
- 专利标题: Sputtering target, A1 interconnection film, and electronic component
- 专利标题(中): 溅射靶,A1互连膜和电子元件
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申请号: US09582284申请日: 2000-06-23
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公开(公告)号: US06736947B1公开(公告)日: 2004-05-18
- 发明人: Koichi Watanabe , Takashi Ishigami
- 申请人: Koichi Watanabe , Takashi Ishigami
- 优先权: JP9-366475 19971224; JP10-027164 19980209; JP10-147996 19980528
- 主分类号: C23C1432
- IPC分类号: C23C1432
摘要:
A sputtering target consists essentially of 0.1 to 50% by weight of at least one kind of element that forms an intermetallic compound with Al, and the balance of Al. The element that forms an intermetallic compound with Al is uniformly dispersed in the target texture, and in a mapping of EPMA analysis, a portion of which count number of detection sensitivity of the element is 22 or more is less than 60% by area ratio in a measurement area of 20×20 &mgr;m. According to such a sputtering target, even when a sputtering method such as long throw sputtering or reflow sputtering is applied, giant dusts or large concavities can be suppressed in occurrence.
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