发明授权
- 专利标题： Sputtering method for forming film and apparatus therefor
- 专利标题（中）： 用于成膜的溅射方法及其设备
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申请号： US09973713申请日： 2001-10-11
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公开(公告)号： US06740210B2公开(公告)日： 2004-05-25
- 发明人: Hiroshi Echizen , Toshihiro Yamashita
- 申请人： Hiroshi Echizen , Toshihiro Yamashita
- 优先权： JP2000-323176 20001023
- 主分类号： C23C1434
- IPC分类号： C23C1434
摘要：
Since the transfer speed of a substrate is controlled to compensate for a film-forming rate, and an electric power applied to heating means for heating the substrate is controlled so that thermal equilibrium of the substrate is maintained, a film having a uniform thickness and quality can be stably formed even when sputtering is performed for a long time.
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