发明授权
US06741521B2 Semiconductor memory device with increased data reading speed 失效
半导体存储器件具有增加的数据读取速度

  • 专利标题: Semiconductor memory device with increased data reading speed
  • 专利标题(中): 半导体存储器件具有增加的数据读取速度
  • 申请号: US10253928
    申请日: 2002-09-25
  • 公开(公告)号: US06741521B2
    公开(公告)日: 2004-05-25
  • 发明人: Takashi Kono
  • 申请人: Takashi Kono
  • 优先权: JP2002-078148 20020320
  • 主分类号: G11C800
  • IPC分类号: G11C800
Semiconductor memory device with increased data reading speed
摘要:
Data of 2-bits prefetched from a memory array and transmitted to an amplifying circuit via a data bus is ordered in accordance with the least significant bit of a column address which is a start address supplied from the outside. The first data is output to read data buses and is directly transmitted to an output data latch. The second data is held once by a second data latch and, after that, transmitted to the output data latch. Since the first data is transmitted from the amplifying circuit directly to the output data latch, the time from a read command is received until data is started to be output can be shortened.
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