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US06743641B2 Method of improving surface planarity prior to MRAM bit material deposition 有权
在MRAM钻头材料沉积之前提高表面平面度的方法

  • Patent Title: Method of improving surface planarity prior to MRAM bit material deposition
  • Patent Title (中): 在MRAM钻头材料沉积之前提高表面平面度的方法
  • Application No.: US10022721
    Application Date: 2001-12-20
  • Publication No.: US06743641B2
    Publication Date: 2004-06-01
  • Inventor: Donald L. Yates , Joel A. Drewes
  • Applicant: Donald L. Yates , Joel A. Drewes
  • Main IPC: H01L2100
  • IPC: H01L2100
Method of improving surface planarity prior to MRAM bit material deposition
Abstract:
The present invention provides a method of fabricating a portion of a memory cell, the method comprising providing a first conductor in a trench which is provided in an insulating layer and flattening an upper surface of the insulating layer and the first conductor, forming a material layer over the flattened upper surface of the insulating layer and the first conductor and flattening an upper portion of the material layer while leaving intact a lower portion of the material layer over the insulating layer and the first conductor.
Abstract(Chinese):

本发明提供了一种制造存储单元的一部分的方法，该方法包括提供一沟槽中的第一导体，其设置在绝缘层中并使绝缘层和第一导体的上表面平坦化，形成材料层 在绝缘层和第一导体的平坦的上表面上方，并且使材料层的上部平坦化，同时在绝缘层和第一导体上完整地保留材料层的下部。

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