Invention Grant
- Patent Title: High frequency semiconductor device
- Patent Title (中): 高频半导体器件
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Application No.: US10090633Application Date: 2002-03-06
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Publication No.: US06747299B2Publication Date: 2004-06-08
- Inventor: Yutaka Mimino , Osamu Baba , Yoshio Aoki , Muneharu Gotoh
- Applicant: Yutaka Mimino , Osamu Baba , Yoshio Aoki , Muneharu Gotoh
- Priority: JP2001-099955 20010330
- Main IPC: H01L21338
- IPC: H01L21338

Abstract:
A high frequency semiconductor device includes a ground plate, an insulating layer, a power-supply conductor, an insulating interlayer, and a strip line as a line conductor. The power-supply conductor is disposed above the ground plate, with the insulating layer provided therebetween. The ground plate and the power-supply conductor have a capacitance formed therebetween. Thus, the line conductor regards the power-supply conductor as having a potential identical to that of the ground plate. This makes it possible to lay out the line conductor without considering the arrangement of the power-supply conductor. In other words, by two-dimensionally overlapping a microstrip line and a power-supply conductor in an MMIC, the degree of freedom in the device layout can be increased.
Public/Granted literature
- US20020140006A1 High frequency semiconductor device Public/Granted day:2002-10-03
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