Abstract:
An electronic circuit includes a first transmission line connected to a DC power source, a second transmission line having one end connected to the first transmission line at a connecting node, a narrow portion formed in the second transmission line and provided at a position that is away from a specific position by equal to or greater than ⅛ wavelength of a signal, the specific position being away from the connecting node at a distance equal to ¼ wavelength, and a capacitor having one end connected to the other end of the second transmission line and the other end connected to a reference potential.
Abstract:
An electronic circuit includes a first transistor having a first terminal grounded, a second transistor having a control terminal coupled with a second terminal of the first transistor, a first terminal grounded via a first capacitor, and a second terminal to which a DC power supply is connected, a first distributed constant line having one end connected to a first node between the second terminal of the first transistor and the control terminal of the second transistor and another end grounded via a second capacitor, a second distributed constant line having one end connected to the second terminal of the first transistor and another end connected to the first node, a third distributed constant line having one end connected to the control terminal of the second transistor and another end connected to the first node, a resistor connected between a second node between the first line and the second capacitor and a third node between the first terminal of the second transistor and the first capacitor, and a path that connects the third node and the second terminal of the first transistor via the first line and the resistor in a DC circuit operation.
Abstract:
In a high frequency semiconductor device, a shield plate which is connected to the ground potential is provided above an MMIC structure including line conductors, with an insulating interlayer provided therebetween. By using the shield plate to shield the MMIC, interference caused by external electromagnetic waves or leakage of electromagnetic waves to the exterior can be reduced in a chip alone.
Abstract:
A negative resistance circuit having an output terminal is connected to a first terminal of a strip shaped resonator. Anode of a variable capacitance diode is connected to a second terminal of the strip shaped resonator via a capacitor 1′. Cathode of the variable capacitance diode is grounded. One terminal of a high impedance strip shaped line is connected to the anode of the variable capacitance diode. Other terminal of the strip shaped line is grounded via a capacitor 4. The capacitor 4 has sufficiently low impedance at an oscillation frequency.
Abstract:
A semiconductor integrated circuit has a 3-dimmensional interconnection line structure for high-speed operation. One aspect of the present invention, there is provided a monolithic microwave integrated circuit (MMIC) having a 3-dimmensional tournament tree shaped multilayer interconnection lines, wherein a single electric feeding point on a top surface of the MMIC is divided, layer by layer, into plural electrodes on the semiconductor substrate of the MMIC via a plurality of laminated interconnection layers and vertical interconnection layers therebetween shaped like a tournament tree.
Abstract:
An electronic circuit device includes a negative resistance generating circuit, a second transistor and a path. The negative resistance generating circuit has a first transistor having a control terminal coupled to a resonator. The second transistor has a control terminal coupled to an output terminal of the first transistor and has an output terminal coupled to a DC bias terminal. The path is coupled to between the DC bias terminal and an output terminal of the first transistor through the second transistor and provides a bias to the first transistor.
Abstract:
A high frequency semiconductor device includes a ground plate, an insulating layer, a power-supply conductor, an insulating interlayer, and a strip line as a line conductor. The power-supply conductor is disposed above the ground plate, with the insulating layer provided therebetween. The ground plate and the power-supply conductor have a capacitance formed therebetween. Thus, the line conductor regards the power-supply conductor as having a potential identical to that of the ground plate. This makes it possible to lay out the line conductor without considering the arrangement of the power-supply conductor. In other words, by two-dimensionally overlapping a microstrip line and a power-supply conductor in an MMIC, the degree of freedom in the device layout can be increased.
Abstract:
A high frequency semiconductor device includes semiconductor elements provided on a semiconductor substrate, a surface insulating layer for covering the semiconductor elements, at least one wiring layer which is provided above the surface insulating layer, with at least one insulating interlayer provided therebetween, and which combines with the ground potential to form transmission line, and at least one heat-radiating stud which is provided in at least one throughhole so as to penetrate said insulating interlayers and so as not to penetrate said surface insulating layer.
Abstract:
An electronic circuit includes a first transistor having a first terminal grounded, a second transistor having a control terminal coupled with a second terminal of the first transistor, a first terminal grounded via a first capacitor, and a second terminal to which a DC power supply is connected, a first distributed constant line having one end connected to a first node between the second terminal of the first transistor and the control terminal of the second transistor and another end grounded via a second capacitor, a second distributed constant line having one end connected to the second terminal of the first transistor and another end connected to the first node, a third distributed constant line having one end connected to the control terminal of the second transistor and another end connected to the first node, a resistor connected between a second node between the first line and the second capacitor and a third node between the first terminal of the second transistor and the first capacitor, and a path that connects the third node and the second terminal of the first transistor via the first line and the resistor in a DC circuit operation.
Abstract:
A circuit includes: a first line to which input and output signal terminals are connected; a first transistor having a first terminal connected to the first line, a second terminal connected to a ground potential, and a control terminal supplied with a first oscillation signal, the first transistor outputting the first signal and its harmonic component; a second transistor having a first terminal connected to the first line, a second terminal connected to the ground potential, and a control terminal supplied with a second oscillation signal, the second transistor outputting the second signal and its harmonic component; a first harmonic generator connected to the control terminal of the first transistor and generates a harmonic component including the harmonic component by the first transistor; and a second harmonic generator connected to the control terminal of the second transistor and generates a harmonic component including the harmonic component by the second transistor.