发明授权
- 专利标题： Semiconductor device
- 专利标题（中）： 半导体器件
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申请号： US10093519申请日： 2002-03-11
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公开(公告)号： US06747317B2公开(公告)日： 2004-06-08
- 发明人: Masao Kondo , Kazuaki Kurihara , Kenji Maruyama , Hideki Yamawaki
- 申请人： Masao Kondo , Kazuaki Kurihara , Kenji Maruyama , Hideki Yamawaki
- 优先权： JP2001-338408 20011102
- 主分类号： H01L2701
- IPC分类号： H01L2701
摘要：
The present invention provides a semiconductor device comprising a single-crystal silicon substrate; and a single-crystal oxide thin film having a perovskite structure formed through epitaxial growth on the single-crystal silicon substrate. The single-crystal oxide thin film is directly in contact with a surface of the single-crystal silicon substrate, and contains a bivalent metal that is reactive to silicon.