公开(公告)号：US07635395B2

公开(公告)日：2009-12-22

申请号：US11378290

申请日：2006-03-20

申请人： Hiroyuki Hyodo ,  Hideki Yamawaki ,  Kenji Maruyama ,  Masaharu Hida

发明人： Hiroyuki Hyodo ,  Hideki Yamawaki ,  Kenji Maruyama ,  Masaharu Hida

IPC分类号： B01D7/00

CPC分类号： C23C16/4483 ,  C23C16/4485

摘要： Solid material gasification method comprises a solution preparation step wherein a first solid material is dissolved in a solvent to prepare a gasification solution, a solvent removal step wherein a second solid material is separated by removing the solvent used to prepare the gasification solution from that solution, and a solid sublimation step wherein the second solid material is gasified by sublimation.

摘要翻译： 固体气化方法包括溶液制备步骤，其中将第一固体材料溶解在溶剂中以制备气化溶液;溶剂去除步骤，其中通过从溶液中除去用于制备气化溶液的溶剂来分离第二固体物质， 和固体升华步骤，其中第二固体材料通过升华气化。

公开(公告)号：US20060160370A1

公开(公告)日：2006-07-20

申请号：US11378290

申请日：2006-03-20

申请人： Hiroyuki Hyodo ,  Hideki Yamawaki ,  Kenji Maruyama ,  Masaharu Hida

发明人： Hiroyuki Hyodo ,  Hideki Yamawaki ,  Kenji Maruyama ,  Masaharu Hida

IPC分类号： H01L21/31

CPC分类号： C23C16/4483 ,  C23C16/4485

摘要： Solid material gasification method comprises a solution preparation step wherein a first solid material is dissolved in a solvent to prepare a gasification solution, a solvent removal step wherein a second solid material is separated by removing the solvent used to prepare the gasification solution from that solution, and a solid sublimation step wherein the second solid material is gasified by sublimation.

摘要翻译： 固体气化方法包括溶液制备步骤，其中将第一固体材料溶解在溶剂中以制备气化溶液;溶剂去除步骤，其中通过从溶液中除去用于制备气化溶液的溶剂来分离第二固体物质， 和固体升华步骤，其中第二固体材料通过升华气化。

公开(公告)号：US07883961B2

公开(公告)日：2011-02-08

申请号：US11998176

申请日：2007-11-28

申请人： Hiroaki Tamura ,  Masaki Kurasawa ,  Hideki Yamawaki

发明人： Hiroaki Tamura ,  Masaki Kurasawa ,  Hideki Yamawaki

IPC分类号： H01L21/8242

CPC分类号： H01L27/11507 ,  H01L27/11502

摘要： A manufacturing method for a ferroelectric memory device including: forming a lower electrode; forming an electrode oxide film composed of an oxide of a constituent material of the lower electrode; forming a first ferroelectric layer on the lower electrode by reaction between organometallic source material gas and oxygen gas; forming a second ferroelectric layer on the first ferroelectric layer by reaction between organometallic source material gas and oxygen gas; and forming an upper electrode on the second ferroelectric layer. In the method, the oxygen gas in the forming of the first ferroelectric layer is in an amount less than the amount of oxygen necessary for reaction of the organometallic source material gas. In the method, the oxygen gas in the forming of the second ferroelectric layer is in an amount greater than the amount of oxygen necessary for reaction of the organometallic source material gas.

摘要翻译： 一种铁电存储器件的制造方法，包括：形成下电极; 形成由下电极的构成材料的氧化物构成的电极氧化膜; 通过有机金属源材料气体和氧气之间的反应在下电极上形成第一铁电层; 通过有机金属源材料气体和氧气之间的反应在第一铁电体层上形成第二铁电层; 以及在所述第二铁电层上形成上电极。 在该方法中，形成第一铁电体层中的氧气的量小于有机金属源材料气体反应所需的氧气量。 在该方法中，形成第二铁电体层的氧气的量比有机金属源材料气体反应所需的氧气的量大。

公开(公告)号：US20050105038A1

公开(公告)日：2005-05-19

申请号：US11017820

申请日：2004-12-22

申请人： Masao Kondo ,  Hideki Yamawaki

发明人： Masao Kondo ,  Hideki Yamawaki

IPC分类号： C30B29/26 ,  C23C16/40 ,  G02F1/1339 ,  H01L21/8246 ,  H01L27/105 ,  H01L41/08 ,  H01L41/09 ,  H01L41/18 ,  H01L41/187 ,  H01L41/22 ,  H01L41/29 ,  H01L41/317 ,  H01L41/39

CPC分类号： H01L41/0815 ,  H01L41/1875 ,  H01L41/29 ,  H01L41/319

摘要： A thin film multilayer body is disclosed that includes a single crystal substrate of silicon or gallium arsenide; an intermediate layer of magnesia spinel formed on the single crystal substrate by epitaxial growth; and a conductive layer of a platinum-group element formed on the intermediate layer by epitaxial growth. An oxide layer is to be epitaxially grown on the conductive layer, the oxide layer having a crystalline structure having a simple perovskite lattice.

摘要翻译： 公开了一种薄膜多层体，其包括硅或砷化镓的单晶衬底; 通过外延生长在单晶衬底上形成的氧化镁尖晶石的中间层; 以及通过外延生长在中间层上形成的铂族元素的导电层。 在导电层上外延生长氧化物层，氧化物层具有具有简单钙钛矿晶格的晶体结构。

公开(公告)号：US06852551B2

公开(公告)日：2005-02-08

申请号：US10767178

申请日：2004-01-30

申请人： Hideki Yamawaki

发明人： Hideki Yamawaki

IPC分类号： C23C16/40 ,  H01L21/02 ,  H01L21/31 ,  H01L21/314 ,  H01L21/316 ,  H01L21/8246 ,  H01L27/105 ,  H01L21/00 ,  H01L21/8242 ,  B05C11/00

CPC分类号： H01L21/02271 ,  C23C16/409 ,  H01L21/02197 ,  H01L21/02312 ,  H01L21/31691 ,  H01L28/55 ,  H01L28/60 ,  H01L28/65

摘要： A method of forming a ferroelectric film includes the steps of forming a layer by a material that takes a metal state in a reducing ambient and an oxide state in an oxidizing ambient, and depositing a ferroelectric film on a surface of the layer by supplying gaseous sources of the ferroelectric film and an oxidizing gas and causing a decomposition of the gaseous sources at the surface of said layer, wherein the step of depositing the ferroelectric film is started with a preparation step in which the state of the surface of said layer is controlled substantially to a critical point in which the layer changes from the metal state to the oxide state and from the oxide state to the metal state.

摘要翻译： 形成铁电体膜的方法包括以下步骤：通过在还原环境中具有金属状态并且在氧化环境中具有氧化态的材料形成层，并且通过提供气体源将铁电膜沉积在该层的表面上 的铁电体膜和氧化气体，并且在所述层的表面引起气态源的分解，其中沉积强电介质膜的步骤开始于制备步骤，其中所述层的表面的状态基本上被控制 到其中层从金属状态转变为氧化态，从氧化物状态转变为金属状态的临界点。

公开(公告)号：US20080145953A1

公开(公告)日：2008-06-19

申请号：US11998176

申请日：2007-11-28

申请人： Hiroaki Tamura ,  Masaki Kurasawa ,  Hideki Yamawaki

发明人： Hiroaki Tamura ,  Masaki Kurasawa ,  Hideki Yamawaki

IPC分类号： H01L21/00

CPC分类号： H01L27/11507 ,  H01L27/11502

摘要： A manufacturing method for a ferroelectric memory device including: forming a lower electrode; forming an electrode oxide film composed of an oxide of a constituent material of the lower electrode; forming a first ferroelectric layer on the lower electrode by reaction between organometallic source material gas and oxygen gas; forming a second ferroelectric layer on the first ferroelectric layer by reaction between organometallic source material gas and oxygen gas; and forming an upper electrode on the second ferroelectric layer. In the method, the oxygen gas in the forming of the first ferroelectric layer is in an amount less than the amount of oxygen necessary for reaction of the organometallic source material gas. In the method, the oxygen gas in the forming of the second ferroelectric layer is in an amount greater than the amount of oxygen necessary for reaction of the organometallic source material gas.

摘要翻译： 一种铁电存储器件的制造方法，包括：形成下电极; 形成由下电极的构成材料的氧化物构成的电极氧化膜; 通过有机金属源材料气体和氧气之间的反应在下电极上形成第一铁电层; 通过有机金属源材料气体和氧气之间的反应在第一铁电体层上形成第二铁电层; 以及在所述第二铁电层上形成上电极。 在该方法中，形成第一铁电体层中的氧气的量小于有机金属源材料气体反应所需的氧气量。 在该方法中，形成第二铁电体层的氧气的量比有机金属源材料气体反应所需的氧气的量大。

公开(公告)号：US06943397B2

公开(公告)日：2005-09-13

申请号：US10647246

申请日：2003-08-26

申请人： Masao Kondo ,  Hideki Yamawaki ,  Kenji Maruyama ,  Kazuaki Kurihara ,  Masaharu Hida ,  Shigeyoshi Umemiya ,  Masaki Kurasawa

发明人： Masao Kondo ,  Hideki Yamawaki ,  Kenji Maruyama ,  Kazuaki Kurihara ,  Masaharu Hida ,  Shigeyoshi Umemiya ,  Masaki Kurasawa

IPC分类号： H01L27/04 ,  H01L21/02 ,  H01L21/314 ,  H01L21/316 ,  H01L21/822 ,  H01L21/8246 ,  H01L27/105 ,  H01L41/08 ,  H01L41/09 ,  H01L41/18 ,  H01L41/22 ,  H01L41/29 ,  H01L41/318 ,  H03H3/08 ,  H03H9/02 ,  H01L29/76

CPC分类号： H01L28/55 ,  H01L21/31691 ,  H01L28/60 ,  H03H9/02574

摘要： A device having a capacitor element includes: an underlying body having a non-orientated first surface; a lower electrode formed on the first surface of the underlying body, the lower electrode containing conductive metal oxide and not containing noble metal, such as LaNiO3, the conductive metal oxide having a (0 0 1) orientated ABO3 type pervskite structure; a ferroelectric layer formed on the lower electrode, having a rhombohedral ABO3 type pervskite structure, the ferroelectric layer being preferentially (0 0 1) orientated in conformity with the orientation of the lower electrode, and an upper electrode formed on the ferroelectric layer.

摘要翻译： 具有电容器元件的器件包括：具有非取向第一表面的下体; 形成在下体的第一表面上的下电极，下电极包含导电金属氧化物，不含贵金属，例如LaNiO 3，导电金属氧化物具有（0 1）取向 ABO 3型钙钛矿结构; 形成在下电极上的具有菱形ABO 3型钙钛矿结构的铁电层，所述铁电层优选（0 1）与所述下电极的取向一致，所述上电极 形成在铁电层上。

公开(公告)号：US20050162595A1

公开(公告)日：2005-07-28

申请号：US11085556

申请日：2005-03-22

申请人： Masao Kondo ,  Hideki Yamawaki

发明人： Masao Kondo ,  Hideki Yamawaki

IPC分类号： G02F1/055 ,  G02F1/1337 ,  G02F1/295

CPC分类号： G02F1/055 ,  G02F1/0553 ,  G02F1/295

摘要： A disclosed optical deflection element includes a magnesia spinel film 22, a lower electrode 23, a lower cladding layer 24, a core layer 25, and an upper cladding layer 26, which are sequentially stacked formed on a silicon single crystal substrate 21. The magnesia spinel film 22, the lower electrode 23, a PLZT film acting as the lower cladding layer 24, and a PZT film acting as the core layer 25 are epitaxially grown on respective underlying layers thereof. Because of a voltage applied between the lower electrode 23 and the upper electrode 26, refractive index variable regions 25A, 24A, in which the refractive index varies, are formed due to the electro-optical effect. Light incident into the core layer 25 is deflected at the interface between the core layer 25 and the refractive index variable regions 25A, 24A to the inner side relative to the surface of the core layer 25.

摘要翻译： 所公开的光偏转元件包括依次层叠形成在硅单晶基板21上的氧化镁尖晶石膜22，下电极23，下包层24，芯层25和上包层26。 将氧化镁尖晶石膜22，下电极23，作为下包层24的PLZT膜和作为芯层25的PZT膜外延生长在其各自的下层上。 由于电光效应，由于施加在下电极23和上电极26之间的电压，折射率变化的折射率可变区域25A，24A形成。 入射到芯层25的光在芯层25和折射率可变区域25A，24A之间的界面处相对于芯层25的表面向内侧偏转。

公开(公告)号：US06747317B2

公开(公告)日：2004-06-08

申请号：US10093519

申请日：2002-03-11

申请人： Masao Kondo ,  Kazuaki Kurihara ,  Kenji Maruyama ,  Hideki Yamawaki

发明人： Masao Kondo ,  Kazuaki Kurihara ,  Kenji Maruyama ,  Hideki Yamawaki

IPC分类号： H01L2701

CPC分类号： H01L21/02266 ,  C23C14/28 ,  C30B23/02 ,  C30B25/18 ,  C30B29/32 ,  H01L21/02197 ,  H01L21/02293 ,  H01L21/02304 ,  H01L21/31691

摘要： The present invention provides a semiconductor device comprising a single-crystal silicon substrate; and a single-crystal oxide thin film having a perovskite structure formed through epitaxial growth on the single-crystal silicon substrate. The single-crystal oxide thin film is directly in contact with a surface of the single-crystal silicon substrate, and contains a bivalent metal that is reactive to silicon.

摘要翻译： 本发明提供一种包括单晶硅衬底的半导体器件; 以及在单晶硅衬底上通过外延生长形成具有钙钛矿结构的单晶氧化物薄膜。 单晶氧化物薄膜直接与单晶硅衬底的表面接触，并且含有与硅反应的二价金属。

公开(公告)号：US5037774A

公开(公告)日：1991-08-06

申请号：US73839

申请日：1987-07-15

申请人： Hideki Yamawaki ,  Yoshihiro Arimoto ,  Shigeo Kodama ,  Takafumi Kimura ,  Masaru Ihara

发明人： Hideki Yamawaki ,  Yoshihiro Arimoto ,  Shigeo Kodama ,  Takafumi Kimura ,  Masaru Ihara

IPC分类号： H01L27/12 ,  H01L21/20 ,  H01L21/205 ,  H01L21/324 ,  H01L21/86

CPC分类号： H01L21/324 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/0262 ,  Y10S148/017 ,  Y10S148/025 ,  Y10S148/15

摘要： Process for the production of semiconductor devices by using silicon-on-insulator (SOI) techniques. The Si layers of the SOI structure include an interfacial layer of Si and a buffer layer of Si formed thereon, whereby the formation of stacking faults in the Si layers can be effectively prevented. Pretreatment of the underlying insulating material with a molybdate solution and interposition of an additional layer of slowly grown single-crystalline Si between the buffer layer of Si and the overlying active Si layer are also effective to inhibit the stacking faults. Semiconductor devices with high quality can be produced with good yield.

摘要翻译： 通过使用绝缘体上硅（SOI）技术制造半导体器件的工艺。 SOI结构的Si层包括Si的界面层和在其上形成的Si的缓冲层，由此可以有效地防止在Si层中形成堆垛层错。 用钼酸盐溶液预处理下层绝缘材料，并在Si的缓冲层和上覆的有源Si层之间插入缓慢生长的单晶Si的附加层也有效地抑制堆垛层错。 可以以良好的产量生产具有高质量的半导体器件。