发明授权
US06747845B1 Modified strain region of strain reactive slider with implanted ions, electrons or neutral atoms
失效
具有注入离子，电子或中性原子的应变反应滑块的改性应变区
- 专利标题： Modified strain region of strain reactive slider with implanted ions, electrons or neutral atoms
- 专利标题（中）： 具有注入离子，电子或中性原子的应变反应滑块的改性应变区
-
申请号： US09689050申请日： 2000-10-11
-
公开(公告)号： US06747845B1公开(公告)日： 2004-06-08
- 发明人: John Edward Eric Baglin , Richard D. Bunch , Linden James Crawforth , Eric W. Flint , Andrew J. Kellock , Timothy Clark Reiley
- 申请人： John Edward Eric Baglin , Richard D. Bunch , Linden James Crawforth , Eric W. Flint , Andrew J. Kellock , Timothy Clark Reiley
- 主分类号： G11B560
- IPC分类号： G11B560
摘要：
At least one modified strain region having a damage depth between 0.1 and 2 microns in a disk drive slider is created by implantation with ions, electrons or neutral atoms. The modified strain region induces a deformation of the disk drive slider. The nature and extent of this deformation is determined by the interaction between the slider and the modified strain region.
信息查询
