The present invention provides a hard polishing pad consisting of a non-foam material which is used in a CMP apparatus. Hard polishing pads consisting of foam resins show good pattern step difference elimination, but tend to cause scratching of the wafer. Furthermore, the polishing rate tends to be lower than that of polishing pads consisting of foam polyurethane. In the polishing pad of the present invention, spiral grooves or concentric circular grooves and lattice-form grooves are combined in the surface of the polishing pad; furthermore, the angles of intersection of the grooves are set at less than 2 degrees, and there are no edge parts with a curvature radius of 50 nm or less in the surface of the polishing pad. Accordingly, since there is no generation of flash, the object of polishing is not scratched, and the polishing rate can be increased.