摘要:
The present invention provides a hard polishing pad consisting of a non-foam material which is used in a CMP apparatus. Hard polishing pads consisting of foam resins show good pattern step difference elimination, but tend to cause scratching of the wafer. Furthermore, the polishing rate tends to be lower than that of polishing pads consisting of foam polyurethane. In the polishing pad of the present invention, spiral grooves or concentric circular grooves and lattice-form grooves are combined in the surface of the polishing pad; furthermore, the angles of intersection of the grooves are set at less than 2 degrees, and there are no edge parts with a curvature radius of 50 nm or less in the surface of the polishing pad. Accordingly, since there is no generation of flash, the object of polishing is not scratched, and the polishing rate can be increased.
摘要:
The relationship between polishing conditions constituting elements and the worked shape (amount of polishing) obtained by way of these polishing conditions is input beforehand into polishing condition determining mechanism along with the type of the object of polishing, and polishing conditions (invariable polishing conditions) that are used in common for the polishing of this object of polishing. The polishing condition determining mechanism determines the polishing conditions on the basis of these conditions. Specifically, the above-mentioned polishing conditions constituting elements are given in a time series, or combinations of the above-mentioned polishing conditions constituting elements are converted into variations in the swinging velocity of the polishing body, and the swinging velocity corresponding to the swinging position is determined. The polishing apparatus control mechanism input the polishing conditions determined by the polishing condition determining mechanism, and control the polishing apparatus so that these polishing conditions are realized. As a result, working conditions for obtaining a specified worked shape in a working apparatus can be simply and accurately determined.
摘要:
The relationship between polishing conditions constituting elements and the worked shape (amount of polishing) obtained by means of these polishing conditions is input beforehand into polishing condition determining means along with the type of the object of polishing, and polishing conditions (invariable polishing conditions) that are used in common for the polishing of this object of polishing. The polishing condition determining means determine the polishing conditions on the basis of these conditions. Specifically, the above-mentioned polishing conditions constituting elements are given in a time series, or combinations of the above-mentioned polishing conditions constituting elements are converted into variations in the swinging velocity of the polishing body, and the swinging velocity corresponding to the swinging position is determined. The polishing apparatus control means input the polishing conditions determined by the polishing condition determining means, and control the polishing apparatus so that these polishing conditions are realized. As a result, working conditions for obtaining a specified worked shape in a working apparatus can be simply and accurately determined.
摘要:
In step S11, quantities that are varied (parameters) are respectively varied in a stepwise manner at a specified pitch, and standard working conditions consisting of combinations of these parameters are determined. For all of the standard working conditions, a working is actually performed, and the treated shapes that are obtained as a result are taken as the standard treated shapes for the respective standard working conditions (step S12). In cases where an appropriate simulation program is available, the standard treated shapes may be determined by simulation without actually performing a working. The standard working conditions and standard treated shapes thus determined are stored in a memory device. When the desired shape that is to be obtained by working is given in step S13, a standard treated shape that is close to the desired shape is sought in step S14. Thus, when a treated shape is given, the working conditions for this treated shape can be determined.
摘要:
In step S11, quantities that are varied (parameters) are respectively varied in a stepwise manner at a specified pitch, and standard working conditions consisting of combinations of these parameters are determined. For all of the standard working conditions, a working is actually performed, and the treated shapes that are obtained as a result are taken as the standard treated shapes for the respective standard working conditions (step S12). In cases where an appropriate simulation program is available, the standard treated shapes may be determined by simulation without actually performing a working. The standard working conditions and standard treated shapes thus determined are stored in a memory device. When the desired shape that is to be obtained by working is given in step S13, a standard treated shape that is close to the desired shape is sought in step S14. Thus, when a treated shape is given, the working conditions for this treated shape can be determined.
摘要:
A polishing device includes a wafer chuck mechanism which retains a wafer while its plane to be polished faces upward, a polishing pad component which possesses a polishing plane which polishes the wafer, a polishing head, and a shift mechanism which enables a relative displacement of said polishing pad component in relation to the wafer. A fixation and retention mechanism fixes and retains said polishing pad component to the polishing head in a detachable fashion while its polishing plane faces downward. The displacement distance of the shift mechanism ranges from the polishing position of the wafer to the exchange position of the polishing pad component, so that the polishing pad component is automatically exchanged.
摘要:
After a hole is formed in a polishing pad, a transparent window plate is inserted into the hole. Here, a gap is left between the upper surface of the transparent window plate and the outermost surface constituting the working surface of the polishing pad. During polishing, the polishing head holding the wafer applies a load to the polishing pad by means of a load-applying mechanism, so that the polishing pad and transparent window plate are compressed. In this case, the system is arranged so that the gap remains constant, and so that a dimension equal to or greater than a standard value is maintained. Since the upper surface of the transparent window plate is recessed from the upper surface of the polishing pad, there is no scratching of the surface of the transparent window plate during dressing. Accordingly, the polishing pad has a long useful life.