发明授权
- 专利标题: Method for producing a semiconductor device
- 专利标题(中): 半导体器件的制造方法
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申请号: US10145144申请日: 2002-05-15
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公开(公告)号: US06750158B2公开(公告)日: 2004-06-15
- 发明人: Masahiro Ogawa , Daisuke Ueda , Masahiro Ishida , Masaaki Yuri , Hirokazu Shimizu
- 申请人: Masahiro Ogawa , Daisuke Ueda , Masahiro Ishida , Masaaki Yuri , Hirokazu Shimizu
- 优先权: JP2001-149098 20010518
- 主分类号: H01L2126
- IPC分类号: H01L2126
摘要:
A first semiconductor layer is formed on a mother substrate, and the mother substrate is irradiated with irradiation light from a surface opposite to the first semiconductor layer, so that a thermally decomposed layer formed by thermally decomposing the first semiconductor layer between the first semiconductor layer and the mother substrate. Then, a second semiconductor layer including an active layer is formed on the first semiconductor layer in which the thermally decomposed layer is formed.
公开/授权文献
- US20020173064A1 Method for producing a semiconductor device 公开/授权日:2002-11-21
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