Invention Grant
- Patent Title: Robust field emitter array design
- Patent Title (中): 鲁棒的场发射极阵列设计
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Application No.: US10248030Application Date: 2002-12-12
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Publication No.: US06750470B1Publication Date: 2004-06-15
- Inventor: Colin Wilson
- Applicant: Colin Wilson
- Main IPC: H01L2906
- IPC: H01L2906

Abstract:
There is provided a field emitter device formed over a semiconductor substrate. The field emitter device includes at least one field emitter tip disposed over the substrate, and a conducting gate electrode layer disposed over the substrate. The field emitter device also includes a protective electronic component disposed over and integral to the substrate and electrically connecting the conducting gate electrode layer to the substrate such that if the conducting gate electrode layer experiences a voltage greater than a breakdown voltage of the field emitter device, the protective electronic component conducts current between the conducting gate electrode layer and the substrate.
Public/Granted literature
- US20040113140A1 ROBUST FIELD EMITTER ARRAY DESIGN Public/Granted day:2004-06-17
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