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US06750470B1 Robust field emitter array design 失效
鲁棒的场发射极阵列设计

  • Patent Title: Robust field emitter array design
  • Patent Title (中): 鲁棒的场发射极阵列设计
  • Application No.: US10248030
    Application Date: 2002-12-12
  • Publication No.: US06750470B1
    Publication Date: 2004-06-15
  • Inventor: Colin Wilson
  • Applicant: Colin Wilson
  • Main IPC: H01L2906
  • IPC: H01L2906
Robust field emitter array design
Abstract:
There is provided a field emitter device formed over a semiconductor substrate. The field emitter device includes at least one field emitter tip disposed over the substrate, and a conducting gate electrode layer disposed over the substrate. The field emitter device also includes a protective electronic component disposed over and integral to the substrate and electrically connecting the conducting gate electrode layer to the substrate such that if the conducting gate electrode layer experiences a voltage greater than a breakdown voltage of the field emitter device, the protective electronic component conducts current between the conducting gate electrode layer and the substrate.
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