发明授权
- 专利标题: Plasma processing apparatus
- 专利标题(中): 等离子体处理装置
-
申请号: US10010383申请日: 2001-12-07
-
公开(公告)号: US06753496B2公开(公告)日: 2004-06-22
- 发明人: Takamitsu Tadera , Tatsushi Yamamoto , Masaki Hirayama , Tadahiro Ohmi
- 申请人: Takamitsu Tadera , Tatsushi Yamamoto , Masaki Hirayama , Tadahiro Ohmi
- 优先权: JP2000-378506 20001213
- 主分类号: B23K1000
- IPC分类号: B23K1000
摘要:
On one side of a microwave entrance window that is exposed to the atmosphere, a slot plate having slots and a resonant unit are provided. The slot plate and the resonant unit are integrally placed to be slidable by linear guides with respect to a process chamber. In this way, a plasma processing apparatus can be provided that performs a highly uniform plasma process and is excellent in terms of plasma generation property.
公开/授权文献
- US20020079294A1 Plasma processing apparatus 公开/授权日:2002-06-27
信息查询