发明授权
US06755932B2 Plasma processing system and apparatus and a sample processing method
有权
等离子体处理系统和设备及样品处理方法
- 专利标题: Plasma processing system and apparatus and a sample processing method
- 专利标题(中): 等离子体处理系统和设备及样品处理方法
-
申请号: US09788463申请日: 2001-02-21
-
公开(公告)号: US06755932B2公开(公告)日: 2004-06-29
- 发明人: Toshio Masuda , Tatehito Usui , Mitsuru Suehiro , Hiroshi Kanekiyo , Hideyuki Yamamoto , Kazue Takahashi , Hiromichi Enami
- 申请人: Toshio Masuda , Tatehito Usui , Mitsuru Suehiro , Hiroshi Kanekiyo , Hideyuki Yamamoto , Kazue Takahashi , Hiromichi Enami
- 优先权: JP2000-048933 20000221
- 主分类号: H05H100
- IPC分类号: H05H100
摘要:
The object of the present invention is to provide a plasma processing apparatus wherein plasma is generated in process chamber to treat a sample. Said plasma processing apparatus is further characterized in that multiple closely packed through-holes are formed on the plate installed on the UHF antenna arranged opposite to the sample, an optical transmitter is installed almost in contact with the back of the through-holes, and an optical transmission means is arranged on the other end of said optical transmitter, thereby measuring optical information coming from the sample and plasma through optical transmitter and optical transmission means by means of a measuring instrument. No abnormal discharge or particle contamination occur to through-holes even in long-term discharge process, and no deterioration occurs to the optical performance at the end face of the optical transmitter. Said plasma processing apparatus ensures stable and high precision measurement of the state of the surface of sample and plasma for a long time.
公开/授权文献
信息查询