A tunneling magneto-resistance element of each MTJ (magnetic tunnel junction) memory cell is connected between a bit line and a strap. Each strap is shared by a plurality of tunneling magneto-resistance elements that are located adjacent to each other in the row direction in the same sub array. Each access transistor is connected between a corresponding strap and a ground voltage, and turned ON/OFF in response to a corresponding word line. Since data read operation can be conducted with the structure that does not have an access transistor for every tunneling magneto-resistance element, the array area can be reduced.