发明授权
- 专利标题: Method for manufacturing exchange bias type magnetic field sensing element
- 专利标题(中): 交换偏置型磁场感应元件的制造方法
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申请号: US10013242申请日: 2001-12-10
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公开(公告)号: US06757962B2公开(公告)日: 2004-07-06
- 发明人: Naoya Hasegawa , Eiji Umetsu , Masamichi Saito , Kenichi Tanaka , Yosuke Ide
- 申请人: Naoya Hasegawa , Eiji Umetsu , Masamichi Saito , Kenichi Tanaka , Yosuke Ide
- 优先权: JP2000-375862 20001211; JP2001-125619 20010424
- 主分类号: H04R3100
- IPC分类号: H04R3100
摘要:
In a method for manufacturing a magnetic field sensing element including an electrode layer overlying a second antiferrogmagnetic layer and a first free magnetic layer where the electrode layer exposes a portion of the second magnetic layer, a portion of the second antiferromagnetic layer not covered with the electrode layer and a portion of the first free magnetic layer are removed using the electrode layer as a mask after laminating each layer to form a bottom type spin-valve thin film magnetic element, thereby enabling the first free magnetic layer to be endowed with a sufficient exchange coupling magnetic field by substantially eliminating the tapered portion of the remaining second antiferromagnetic layer thereby enabling the magnetization of the second free magnetic layer to be put into a single domain state.
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