发明授权
US06759100B2 Layer formation method, and substrate with a layer formed by the method
有权
层形成方法,以及通过该方法形成的层的衬底
- 专利标题: Layer formation method, and substrate with a layer formed by the method
- 专利标题(中): 层形成方法,以及通过该方法形成的层的衬底
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申请号: US10378695申请日: 2003-03-04
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公开(公告)号: US06759100B2公开(公告)日: 2004-07-06
- 发明人: Kazuhiro Fukuda , Yasuo Morohoshi , Akira Nishiwaki , Yoshikazu Kondo , Yoshiro Toda , Kiyoshi Oishi
- 申请人: Kazuhiro Fukuda , Yasuo Morohoshi , Akira Nishiwaki , Yoshikazu Kondo , Yoshiro Toda , Kiyoshi Oishi
- 优先权: JP2002-168392 20020610
- 主分类号: C23C1650
- IPC分类号: C23C1650
摘要:
A layer formation method is disclosed which comprises supplying gas to a discharge space, exciting the supplied gas at atmospheric pressure or at approximately atmospheric pressure by applying a high frequency electric field across the discharge space, and exposing a substrate to the excited gas, wherein the high frequency electric field is an electric field in which a first high frequency electric field and a second high frequency electric field are superposed, frequency &ohgr;2 of the second high frequency electric field is higher than frequency &ohgr;1 of the first high frequency electric field, strength V1 of the first high frequency electric field, strength V2 of the second high frequency electric field and strength IV of discharge starting electric field satisfy relationship V1≧IV>V2 or V1>IV≧V2, and power density of the second high frequency electric field is not less than 1 W/cm2.
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