公开(公告)号：US06759100B2

公开(公告)日：2004-07-06

申请号：US10378695

申请日：2003-03-04

申请人： Kazuhiro Fukuda ,  Yasuo Morohoshi ,  Akira Nishiwaki ,  Yoshikazu Kondo ,  Yoshiro Toda ,  Kiyoshi Oishi

发明人： Kazuhiro Fukuda ,  Yasuo Morohoshi ,  Akira Nishiwaki ,  Yoshikazu Kondo ,  Yoshiro Toda ,  Kiyoshi Oishi

IPC分类号： C23C1650

CPC分类号： C23C16/545 ,  C23C16/453 ,  C23C16/505 ,  H05H1/46 ,  H05H2001/466 ,  H05H2001/485 ,  H05H2240/10

摘要： A layer formation method is disclosed which comprises supplying gas to a discharge space, exciting the supplied gas at atmospheric pressure or at approximately atmospheric pressure by applying a high frequency electric field across the discharge space, and exposing a substrate to the excited gas, wherein the high frequency electric field is an electric field in which a first high frequency electric field and a second high frequency electric field are superposed, frequency &ohgr;2 of the second high frequency electric field is higher than frequency &ohgr;1 of the first high frequency electric field, strength V1 of the first high frequency electric field, strength V2 of the second high frequency electric field and strength IV of discharge starting electric field satisfy relationship V1≧IV>V2 or V1>IV≧V2, and power density of the second high frequency electric field is not less than 1 W/cm2.

摘要翻译： 公开了一种层形成方法，其包括向放电空间供应气体，通过在放电空间上施加高频电场，将基底暴露于激发气体，在大气压或大气压下激发供应的气体，其中， 高频电场是第一高频电场和第二高频电场叠加的电场，第二高频电场的频率ω2高于第一高频电场的频率ω1，强度V1 在第一高频电场中，第二高频电场的强度V2和放电起始电场的强度IV满足关系V1> = IV> V2或V1> IV> = V2，第二高频电场的功率密度 场不小于1W / cm 2。

公开(公告)号：US07166335B2

公开(公告)日：2007-01-23

申请号：US10841115

申请日：2004-05-07

申请人： Kazuhiro Fukuda ,  Yasuo Morohoshi ,  Akira Nishiwaki ,  Yoshikazu Kondo ,  Yoshiro Toda ,  Kiyoshi Oishi

发明人： Kazuhiro Fukuda ,  Yasuo Morohoshi ,  Akira Nishiwaki ,  Yoshikazu Kondo ,  Yoshiro Toda ,  Kiyoshi Oishi

IPC分类号： C23C16/50

CPC分类号： C23C16/545 ,  C23C16/453 ,  C23C16/505 ,  H05H1/46 ,  H05H2001/466 ,  H05H2001/485 ,  H05H2240/10

摘要： A layer formation method is disclosed which comprises supplying gas to a discharge space, exciting the supplied gas at atmospheric pressure or at approximately atmospheric pressure by applying a high frequency electric field across the discharge space, and exposing a substrate to the excited gas, wherein the high frequency electric field is an electric field in which a first high frequency electric field and a second high frequency electric field are superposed, frequency ω2 of the second high frequency electric field is higher than frequency ω1 of the first high frequency electric field, strength V1 of the first high frequency electric field, strength V2 of the second high frequency electric field and strength IV of discharge starting electric field satisfy relationship V1≧IV>V2 or V1>IV≧V2, and power density of the second high frequency electric field is not less than 1 W/cm2.

摘要翻译： 公开了一种层形成方法，其包括向放电空间供应气体，通过在放电空间上施加高频电场，将基底暴露于激发气体，在大气压或大气压下激发供应的气体，其中， 高频电场是第一高频电场和第二高频电场叠加的电场，第二高频电场的频率ω2 <2>高于频率ω _{1，第二高频电场的强度V SUB> 1，第二高频电场的强度V SUB> 2 < 放电起始电场的强度IV满足关系V 1 = IV> V 2或V 1 IV> = V 2 第二高频电场的功率密度不小于1W / cm 2。}

公开(公告)号：US07632550B2

公开(公告)日：2009-12-15

申请号：US10364551

申请日：2003-02-11

申请人： Wataru Mizuno ,  Kazuhiro Fukuda ,  Yoshikazu Kondo ,  Yoshiro Toda ,  Kiyoshi Oishi ,  Akira Nishiwaki

发明人： Wataru Mizuno ,  Kazuhiro Fukuda ,  Yoshikazu Kondo ,  Yoshiro Toda ,  Kiyoshi Oishi ,  Akira Nishiwaki

IPC分类号： C23C16/06 ,  H05H1/24

CPC分类号： C23C16/5096 ,  C23C16/18 ,  C23C16/545

摘要： A film forming method comprising: supplying a reactive gas comprising a compound including a metal atom between facing electrodes; arranging a substrate between the electrodes; making the reactive gas in a plasma state by applying a voltage between the electrodes under atmospheric pressure or under a pressure in a vicinity of the atmospheric pressure and discharging; and forming a metal film on a surface of the substrate by supplying a reducing gas having a reducing property into a plasma atmosphere in which the reactive gas in the plasma state exists.

摘要翻译： 一种成膜方法，包括：在相对电极之间提供包含金属原子的化合物的反应气体; 在电极之间布置基板; 通过在大气压下或在大气压附近的压力下在电极之间施加电压并进行放电，使反应气体处于等离子体状态; 以及通过向具有等离子体状态的反应性气体的等离子体气氛中供给具有还原性的还原气体而在基板的表面上形成金属膜。

公开(公告)号：US06849306B2

公开(公告)日：2005-02-01

申请号：US10222318

申请日：2002-08-16

申请人： Kazuhiro Fukuda ,  Yoshikazu Kondo ,  Yoshiro Toda ,  Kiyoshi Oishi ,  Akira Nishiwaki ,  Wataru Mizuno ,  Koji Fukazawa

发明人： Kazuhiro Fukuda ,  Yoshikazu Kondo ,  Yoshiro Toda ,  Kiyoshi Oishi ,  Akira Nishiwaki ,  Wataru Mizuno ,  Koji Fukazawa

IPC分类号： H01J37/32 ,  H05H1/24

CPC分类号： H01J37/32009 ,  H01J37/32825

摘要： A plasma treatment method for surface treatment of a substrate with an atmospheric pressure plasma treatment apparatus is disclosed. The apparatus has a first electrode and a second electrode opposed to each other, a discharge space between the opposed electrodes, a voltage application means for applying voltage across the discharge space, a gas supply means for supplying a reactive gas and an inert gas to the discharge space. The method is one wherein the reactive gas at the discharge space is excited at atmospheric pressure or at approximately atmospheric pressure by applying voltage through the voltage application means to generate discharge plasma, and a substrate is exposed to the discharge plasma to be subjected to surface treatment, and wherein the reactive gas is not directly in contact with the discharge surface of the first electrode or the second electrode.

摘要翻译： 公开了一种用大气压等离子体处理装置对衬底进行表面处理的等离子体处理方法。 该装置具有彼此相对的第一电极和第二电极，相对电极之间的放电空间，用于在放电空间上施加电压的电压施加装置，用于向该放电空间供应反应性气体和惰性气体的气体供给装置 放电空间。 该方法是其中放电空间处的反应气体在大气压或大气压下通过施加电压通过电压施加装置激发以产生放电等离子体，并且将衬底暴露于放电等离子体进行表面处理 ，并且其中所述反应性气体不直接与所述第一电极或所述第二电极的放电表面接触。

公开(公告)号：US06652069B2

公开(公告)日：2003-11-25

申请号：US10000888

申请日：2001-11-15

申请人： Yoshiro Toda ,  Kazuhiro Fukuda ,  Akira Nishiwaki

发明人： Yoshiro Toda ,  Kazuhiro Fukuda ,  Akira Nishiwaki

IPC分类号： B41J2135

CPC分类号： B41J2/1606 ,  B05D1/60 ,  B05D3/142 ,  B41J2/16 ,  B41J2/1623 ,  B41J2/1632 ,  B41J2/1642 ,  C23C16/513

摘要： In a surface treatment for treating a surface of a subject of treating by a discharge-activated gas, under an atmospheric pressure or a pressure in the neighborhood of it, by arranging a second electrode at a position separated from the discharging section for generating said discharge-activated gas by a first electrode coated with a dielectric substance, and arranging a surface to be treated of a subject of treating between said plasma generating part, serving as a discharging section, and said second electrode, a surface treatment of said subject of treating is practiced.

公开(公告)号：US07740917B2

公开(公告)日：2010-06-22

申请号：US10544084

申请日：2004-07-08

申请人： Hiromoto Ii ,  Toshio Tsuji ,  Chikao Mamiya ,  Kazuhiro Fukuda ,  Kiyoshi Oishi ,  Takakazu Kiyomura

发明人： Hiromoto Ii ,  Toshio Tsuji ,  Chikao Mamiya ,  Kazuhiro Fukuda ,  Kiyoshi Oishi ,  Takakazu Kiyomura

IPC分类号： C23C16/00 ,  H05H1/24

CPC分类号： C23C16/45595 ,  C23C16/08 ,  C23C16/18 ,  C23C16/505 ,  C23C16/56 ,  Y10T428/31504

摘要： A method for forming a film comprising a first process and a second process, the first process comprising the steps of: supplying a discharge gas to a first discharge space where high frequency electric field A is generated at or near atmospheric pressure, whereby the discharge gas is excite; transferring energy of the excited discharge gas to a film forming gas, whereby the film forming gas is excited; and exposing a substrate to the film forming gas to form a film on the substrate, and the second process comprising the steps of: supplying a gas containing an oxidizing gas to a second discharge space where high frequency electric field B is generated at or near atmospheric pressure, whereby the gas containing the oxidizing gas is excite; and the film formed in the first process is exposed to the excited gas containing the oxidizing gas.

摘要翻译： 一种形成膜的方法，包括第一工艺和第二工艺，所述第一工艺包括以下步骤：将放电气体供应到在大气压或大气压附近产生高频电场A的第一放电空间，由此放电气体 是激动的 将激发的放电气体的能量转移到成膜气体，由此成膜气体被激发; 并且将基板暴露于成膜气体以在基板上形成膜，第二工序包括以下步骤：将含氧化气体的气体供给到在大气中或接近大气压下产生高频电场B的第二放电空间 由此含有氧化气体的气体是激发的; 并且在第一工序中形成的膜暴露于含有氧化气体的激发气体。

公开(公告)号：US06558889B1

公开(公告)日：2003-05-06

申请号：US10229126

申请日：2002-08-27

申请人： Kiyoshi Oishi ,  Kazuhiro Fukuda

发明人： Kiyoshi Oishi ,  Kazuhiro Fukuda

IPC分类号： G03C176

CPC分类号： G03C1/915 ,  G03C1/385 ,  G03C1/49863 ,  H01J2237/336 ,  Y10S430/153 ,  Y10T428/31 ,  Y10T428/8305

摘要： A surface treatment method for enhancing hydrophobicity of the surface of a film support is disclosed, comprising subjecting at least one side of the surface to a gas-discharge plasma treatment in a gas phase atmosphere comprising (a) an inert gas comprising argon or helium and (b) a reactive gas comprising a hydrocarbon gas or fluorinated hydrocarbon gas. There is also disclosed a photothermographic material by the use of the support having been subjected to the surface treatment.

公开(公告)号：US06455239B2

公开(公告)日：2002-09-24

申请号：US09800376

申请日：2001-03-06

申请人： Kiyoshi Oishi ,  Kazuhiro Fukuda

发明人： Kiyoshi Oishi ,  Kazuhiro Fukuda

IPC分类号： G03C1795

CPC分类号： G03C1/915 ,  G03C1/385 ,  G03C1/49863 ,  H01J2237/336 ,  Y10S430/153 ,  Y10T428/31 ,  Y10T428/8305

摘要： A surface treatment method for enhancing hydrophobicity of the surface of a film support is disclosed, comprising subjecting at least one side of the surface to a gas-discharge plasma treatment in a gas phase atmosphere comprising (a) an inert gas comprising argon or helium and (b) a reactive gas comprising a hydrocarbon gas or fluorinated hydrocarbon gas. There is also disclosed a photothermographic material by the use of the support having been subjected to the surface treatment.

摘要翻译： 公开了一种用于增强薄膜载体表面的疏水性的表面处理方法，包括使表面的至少一面在气相气氛中进行气体放电等离子体处理，其包含（a）包含氩或氦的惰性气体和 （b）包含烃气体或氟化烃气体的反应气体。 还通过使用经过表面处理的载体，公开了光热敏成像材料。

公开(公告)号：US5374382A

公开(公告)日：1994-12-20

申请号：US592366

申请日：1990-10-03

申请人： Akira Nishiwaki ,  Yasuo Moroboshi ,  Atsushi Saito ,  Kazuhiro Fukuda

发明人： Akira Nishiwaki ,  Yasuo Moroboshi ,  Atsushi Saito ,  Kazuhiro Fukuda

IPC分类号： B01J3/00 ,  C09B67/02 ,  B29B9/00

CPC分类号： C09B67/0097 ,  B01J3/006

摘要： The invention provides a method of producing ultra-fine particles and an apparatus therefor. A particle carrier is moved in a chamber which is decompresed and charged with inert gas. An evaporable material is heated so as to deposit evaporated ultra-fine particles onto a part of the moving particle carrier. The deposited ultra-fine particles are collected from the part of the moving particle carrier while evaporated ultra-fine particles deposit onto another part of the moving particle carrier.

摘要翻译： 本发明提供一种生产超细颗粒的方法及其设备。 颗粒载体在被分解并且装有惰性气体的室中移动。 将蒸发的材料加热以将蒸发的超细颗粒沉积在移动的颗粒载体的一部分上。 从移动颗粒载体的一部分收集沉积的超细颗粒，同时蒸发的超细颗粒沉积到移动颗粒载体的另一部分上。

公开(公告)号：US20060199014A1

公开(公告)日：2006-09-07

申请号：US10544084

申请日：2004-07-08

申请人： Hiromoto II ,  Toshio Tsuji ,  Chikao Mamiya ,  Kazuhiro Fukuda ,  Kiyoshi Oishi ,  Takakazu Kiyomura

发明人： Hiromoto II ,  Toshio Tsuji ,  Chikao Mamiya ,  Kazuhiro Fukuda ,  Kiyoshi Oishi ,  Takakazu Kiyomura

IPC分类号： B32B9/00

CPC分类号： C23C16/45595 ,  C23C16/08 ,  C23C16/18 ,  C23C16/505 ,  C23C16/56 ,  Y10T428/31504

摘要： A method for forming a film comprising a first process and a second process, the first process comprising the steps of: supplying a discharge gas to a first discharge space where high frequency electric field A is generated at or near atmospheric pressure, whereby the discharge gas is excite; transferring energy of the excited discharge gas to a film forming gas, whereby the film forming gas is excited; and exposing a substrate to the film forming gas to form a film on the substrate, and the second process comprising the steps of: supplying a gas containing an oxidizing gas to a second discharge space where high frequency electric field B is generated at or near atmospheric pressure, whereby the gas containing the oxidizing gas is excite; and the film formed in the first process is exposed to the excited gas containing the oxidizing gas.

摘要翻译： 一种形成膜的方法，包括第一工艺和第二工艺，所述第一工艺包括以下步骤：将放电气体供应到在大气压或大气压附近产生高频电场A的第一放电空间，由此放电气体 是激动的 将激发的放电气体的能量转移到成膜气体，由此成膜气体被激发; 并且将基板暴露于成膜气体以在基板上形成膜，第二工序包括以下步骤：将含氧化气体的气体供给到在大气中或接近大气压下产生高频电场B的第二放电空间 由此含有氧化气体的气体是激发的; 并且在第一工序中形成的膜暴露于含有氧化气体的激发气体。