Process for etching a controllable thickness of oxide on an integrated circuit structure on a semiconductor substrate using nitrogen plasma and plasma and an rf bias applied to the substrate

发明授权

US06759337B1 Process for etching a controllable thickness of oxide on an integrated circuit structure on a semiconductor substrate using nitrogen plasma and plasma and an rf bias applied to the substrate 有权

标题翻译：使用氮等离子体和等离子体在半导体衬底上的集成电路结构上蚀刻可控厚度的氧化物和施加到衬底的rf偏压的工艺

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专利标题： Process for etching a controllable thickness of oxide on an integrated circuit structure on a semiconductor substrate using nitrogen plasma and plasma and an rf bias applied to the substrate
专利标题（中）： 使用氮等离子体和等离子体在半导体衬底上的集成电路结构上蚀刻可控厚度的氧化物和施加到衬底的rf偏压的工艺
申请号： US09464297

申请日： 1999-12-15
公开(公告)号： US06759337B1

公开(公告)日： 2004-07-06
发明人: Sheldon Aronowitz , Valeriy Sukharev , John Haywood , James P. Kimball , Helmut Puchner , Ravindra Manohar Kapre , Nicholas Eib
申请人： Sheldon Aronowitz , Valeriy Sukharev , John Haywood , James P. Kimball , Helmut Puchner , Ravindra Manohar Kapre , Nicholas Eib
主分类号： H01L21302
IPC分类号： H01L21302

Process for etching a controllable thickness of oxide on an integrated circuit structure on a semiconductor substrate using nitrogen plasma and plasma and an rf bias applied to the substrate

摘要：

A process for etching oxide is disclosed wherein a reproducibly accurate and uniform amount of silicon oxide can be removed from a surface of an oxide previously formed over a semiconductor substrate by exposing the oxide to a nitrogen plasma in an etch chamber while applying an rf bias to a substrate support on which the substrate is supported in the etch chamber. The thickness of the oxide removed in a given period of time may be changed by changing the amount of rf bias applied to the substrate through the substrate support.

摘要（中）：

公开了一种用于蚀刻氧化物的方法，其中可以通过在蚀刻室中暴露氧化物到氮等离子体，同时将rf偏压施加到半导体衬底上，通过在半导体衬底上预先形成的氧化物的表面，可再现性地精确和均匀的量的氧化硅衬底支撑件，衬底支撑在蚀刻室中。在给定时间段内去除的氧化物的厚度可以通过改变通过衬底支撑件施加到衬底的rf偏置量来改变。

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