发明授权
US06759339B1 Method for plasma etching a microelectronic topography using a pulse bias power
有权
使用脉冲偏置功率等离子体蚀刻微电子拓扑的方法
- 专利标题: Method for plasma etching a microelectronic topography using a pulse bias power
- 专利标题(中): 使用脉冲偏置功率等离子体蚀刻微电子拓扑的方法
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申请号: US10319318申请日: 2002-12-13
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公开(公告)号: US06759339B1公开(公告)日: 2004-07-06
- 发明人: Chang Ju Choi , Benjamin Schwarz
- 申请人: Chang Ju Choi , Benjamin Schwarz
- 主分类号: H01L21302
- IPC分类号: H01L21302
摘要:
A method is provided which includes pulsing power applied to a microelectronic topography between a high level and a low level during a plasma etch process. In particular, the high level may be sufficient to form etch byproducts at a faster rate than a rate of removal of the etch byproducts from the reaction chamber at the high level. In contrast, the low level may be sufficient to form etch byproducts at a rate that is less than a rate of removal of the etch byproducts at the low level. In this manner, an etched topography may be formed without an accumulation of residue upon its periphery. Such a method may be particularly beneficial in an embodiment in which the etch byproducts include a plurality of nonvolatile compounds, such as in the fabrication of a magnetic junction of an MRAM device, for example.