发明授权
- 专利标题: Multilayered substrate for semiconductor device
- 专利标题(中): 用于半导体器件的多层衬底
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申请号: US10281163申请日: 2002-10-28
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公开(公告)号: US06759739B2公开(公告)日: 2004-07-06
- 发明人: Jyunichi Nakamura , Tadashi Kodaira , Shunichiro Matsumoto , Hironari Aratani , Takanori Tabuchi , Takeshi Chino
- 申请人: Jyunichi Nakamura , Tadashi Kodaira , Shunichiro Matsumoto , Hironari Aratani , Takanori Tabuchi , Takeshi Chino
- 优先权: JP2001-334744 20011031
- 主分类号: H01L2312
- IPC分类号: H01L2312
摘要:
A multilayered substrate for a semiconductor device, which has a multilayered substrate body formed of a plurality sets of a conductor layer and an insulation layer, and having a face for mounting a semiconductor element thereon and another face for external connection terminals, the face for mounting a semiconductor device being provided with pads through which the substrate is connected to a semiconductor element to be mounted thereon, and the face for external connection terminals being provided with pads through which the substrate is connected to an external electrical circuit, wherein a reinforcing sheet is respectively joined to the face for mounting a semiconductor element thereon and the face for external connection terminals of the multilayered substrate body.
公开/授权文献
- US20030080409A1 Multilayered substrate for semiconductor device 公开/授权日:2003-05-01