发明授权
- 专利标题： Method of manufacturing group III nitride compound semiconductor light emitting device having a light emission output of high light intensity
- 专利标题（中）： 制造具有高光强度的发光输出的III族氮化物化合物半导体发光器件的方法
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申请号： US10192699申请日： 2002-07-11
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公开(公告)号： US06762070B2公开(公告)日： 2004-07-13
- 发明人: Naoki Kaneyama , Makoto Asai , Katsuhisa Sawazaki
- 申请人： Naoki Kaneyama , Makoto Asai , Katsuhisa Sawazaki
- 优先权： JP11-090718 19990331
- 主分类号： H01L2100
- IPC分类号： H01L2100
摘要：
A cap layer of GaN about 140 Å thick and a p-type clad layer of Mg-doped p-type AlxGa1-xN (x=0.12) about 200 Å thick are formed successively on an MQW active layer about 230 Å thick. A p-type contact layer of Mg-doped p-type AlyGa1-yN (y=0.05) about 600 Å thick is further formed thereon. These composition ratios x and y are selected to satisfy the expression “0.03≦0.3x≦y≦0.5x≦0.08”, so that the composition of the p-type contact layer becomes close to the composition of the p-type clad layer.