发明授权
US06762121B2 Method of forming refractory metal contact in an opening, and resulting structure
失效
在开口中形成难熔金属接触的方法，以及结果
- 专利标题： Method of forming refractory metal contact in an opening, and resulting structure
- 专利标题（中）： 在开口中形成难熔金属接触的方法，以及结果
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申请号： US09826036申请日： 2001-04-04
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公开(公告)号： US06762121B2公开(公告)日： 2004-07-13
- 发明人: Jonathan D. Chapple-Sokol , Randy W. Mann , William J. Murphy , Jed H. Rankin , Daniel S. Vanslette
- 申请人： Jonathan D. Chapple-Sokol , Randy W. Mann , William J. Murphy , Jed H. Rankin , Daniel S. Vanslette
- 主分类号： C23C1434
- IPC分类号： C23C1434
摘要：
A method of ensuring against deterioration of an underlying silicide layer over which a refractory material layer is deposited by physical vapor deposition (PVD) or chemical vapor deposition (CVD) is realized by first providing a continuous polysilicon layer prior to the refractory material deposition. The continuous polysilicon layer, preferably no thicker than 50 Å, serves a sacrificial purpose and prevents interaction between any fluorine that is released during the refractory material deposition step from interacting with the underlying silicide.