发明授权
- 专利标题: Semiconductor integrated circuit device and a method of manufacturing the same
- 专利标题(中): 半导体集成电路器件及其制造方法
-
申请号: US10308001申请日: 2002-12-03
-
公开(公告)号: US06762444B2公开(公告)日: 2004-07-13
- 发明人: Fumio Ootsuka , Yusuke Nonaka , Satoshi Shimamoto , Sohei Omori , Hideto Kazama
- 申请人: Fumio Ootsuka , Yusuke Nonaka , Satoshi Shimamoto , Sohei Omori , Hideto Kazama
- 优先权: JP2001-183098 20010618
- 主分类号: H01L21336
- IPC分类号: H01L21336
摘要:
In order to improve the performance of a semiconductor integrated circuit device wherein a capacitor provided between storage nodes of an SRAM and a device having an analog capacitor are formed on a single substrate, a plug is formed in a silicon oxide film on a pair of n channel type MISFETs in a memory cell forming area, and a local wiring LIc for connecting respective gate electrodes and drains of the pair of n channel type MISFETs is formed over the silicon oxide film and the plug. Thereafter, a capacitive insulating film and an upper electrode are further formed over the local wiring LIc. According to the same process step as the local wiring, capacitive insulating film and upper electrode formed in the memory cell forming area, a local wiring LIc, a capacitive insulating film and an upper electrode are formed over a silicon oxide film in an analog capacitor forming area and a plug in the silicon oxide film.