发明授权
US06762455B2 Semiconductor component for high reverse voltages in conjunction with a low on resistance and method for fabricating a semiconductor component 有权
结合低导通电阻的高反向电压的半导体元件和用于制造半导体元件的方法

  • 专利标题: Semiconductor component for high reverse voltages in conjunction with a low on resistance and method for fabricating a semiconductor component
  • 专利标题(中): 结合低导通电阻的高反向电压的半导体元件和用于制造半导体元件的方法
  • 申请号: US10095270
    申请日: 2002-03-11
  • 公开(公告)号: US06762455B2
    公开(公告)日: 2004-07-13
  • 发明人: Klaus-Günter OppermannJenö Tihanyi
  • 申请人: Klaus-Günter OppermannJenö Tihanyi
  • 优先权: DE19943143 19990909
  • 主分类号: H01L2976
  • IPC分类号: H01L2976
Semiconductor component for high reverse voltages in conjunction with a low on resistance and method for fabricating a semiconductor component
摘要:
A semiconductor component includes a semiconductor body of a first conductivity type which accommodates a space charge region. Semiconductor regions of a second conductivity type are disposed in at least one plane extending essentially perpendicularly to a connecting line extending between two electrodes. A cell array is disposed under one of the electrodes in the semiconductor body. At least some of the semiconductor regions of the second conductivity type are connected to the cell array via filiform semiconductor zones of the second conductivity type in order to expedite switching processes. A method for fabricating such a semiconductor component is also provided.
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