发明授权
US06764898B1 Implantation into high-K dielectric material after gate etch to facilitate removal
有权
在栅极蚀刻后植入高K电介质材料以便于去除
- 专利标题： Implantation into high-K dielectric material after gate etch to facilitate removal
- 专利标题（中）： 在栅极蚀刻后植入高K电介质材料以便于去除
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申请号： US10147690申请日： 2002-05-16
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公开(公告)号： US06764898B1公开(公告)日： 2004-07-20
- 发明人: William G. En , Joong S. Jeon , Minh Van Ngo , Ming-Ren Lin
- 申请人： William G. En , Joong S. Jeon , Minh Van Ngo , Ming-Ren Lin
- 主分类号： H01L218242
- IPC分类号： H01L218242
摘要：
The present invention relates to a process of fabricating a semiconductor device, including steps of providing a semiconductor wafer; depositing on the semiconductor wafer at least one layer comprising a high-K dielectric material layer; and subsequently removing a selected portion of the at least one layer comprising a high-K dielectric material by implanting ions into the selected portion, and removing the selected portion by etching. As a result of the implantation, the etch rate of the selected portion is increased relative to an etch rate without the implanting.
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