发明授权
US06765227B1 Semiconductor-on-insulator (SOI) wafer having a Si/SiGe/Si active layer and method of fabrication using wafer bonding
有权
具有Si / SiGe / Si有源层的绝缘体上半导体（SOI）晶片和使用晶片接合的制造方法
- 专利标题： Semiconductor-on-insulator (SOI) wafer having a Si/SiGe/Si active layer and method of fabrication using wafer bonding
- 专利标题（中）： 具有Si / SiGe / Si有源层的绝缘体上半导体（SOI）晶片和使用晶片接合的制造方法
-
申请号： US10116791申请日： 2002-04-04
-
公开(公告)号： US06765227B1公开(公告)日： 2004-07-20
- 发明人: Bin Yu , William G. En , Judy Xilin An , Concetta E. Riccobene
- 申请人： Bin Yu , William G. En , Judy Xilin An , Concetta E. Riccobene
- 主分类号： H01L2906
- IPC分类号： H01L2906
摘要：
A semiconductor-on-insulator (SOI) wafer. The wafer includes a silicon substrate, a buried oxide (BOX) layer disposed on the substrate, and an active layer disposed on the box layer. The active layer has an upper silicon layer disposed on a silicon-germanium layer. The silicon-germanium layer is disposed on a lower silicon layer. The silicon-germanium of the silicon-germanium layer is strained silicon-germanium and is about 200 Å to about 400 Å thick.
信息查询
