发明授权
US06767409B2 Method for cleaning semiconductor wafer after chemical mechanical polishing on copper wiring 失效
铜线上化学机械抛光后半导体晶圆清洗方法

  • 专利标题: Method for cleaning semiconductor wafer after chemical mechanical polishing on copper wiring
  • 专利标题(中): 铜线上化学机械抛光后半导体晶圆清洗方法
  • 申请号: US10075566
    申请日: 2002-02-13
  • 公开(公告)号: US06767409B2
    公开(公告)日: 2004-07-27
  • 发明人: Hidemitsu AokiShinya Yamasaki
  • 申请人: Hidemitsu AokiShinya Yamasaki
  • 优先权: JP10-138365 19980520
  • 主分类号: B08B308
  • IPC分类号: B08B308
Method for cleaning semiconductor wafer after chemical mechanical polishing on copper wiring
摘要:
A copper wiring is desirable for a high-speed logic circuit integrated on a semiconductor substrate, and is patterned through a chemical mechanical polishing, wherein polishing particles are brushed away from the major surface of the resultant semiconductor structure by using aqueous ammonia at 0.0001-0.5 weight percent, catholyte or hydrogen-containing water without damage to the copper wiring, and, thereafter, metallic contaminants such as copper is removed by using washer containing decontaminating agent selected from polycarboxylic acid, ammonium salts thereof and polyaminocarboxylic acid also without damage to the copper wiring.
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