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    Method of forming a high-k film on a semiconductor device
    2.
    发明授权
    Method of forming a high-k film on a semiconductor device 有权
    在半导体器件上形成高k膜的方法

    公开(公告)号：US07192835B2

    公开(公告)日：2007-03-20

    申请号：US10854306

    申请日：2004-05-27

    申请人： Hiroaki Tomimori ,  Hidemitsu Aoki ,  Toshiyuki Iwamoto

    发明人： Hiroaki Tomimori ,  Hidemitsu Aoki ,  Toshiyuki Iwamoto

    IPC分类号： H01L21/302 ,  H01L21/336

    CPC分类号： H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/31111 ,  H01L28/40 ,  H01L29/511 ,  H01L29/517 ,  H01L29/518

    摘要： According to the present invention, high-k film can be etched to provide a desired geometry without damaging the silicon underlying material. A silicon oxide film 52 is formed on a silicon substrate 50 by thermal oxidation, and a high dielectric constant insulating film 54 comprising HfSiOx is formed thereon. Thereafter, polycrystalline silicon layer 56 and high dielectric constant insulating film 54 are selectively removed in stages by a dry etching through a mask of the resist layer 58, and subsequently, the residual portion of the high dielectric constant insulating film 54 and the silicon oxide film 52 are selectively removed by wet etching through a mask of polycrystalline silicon layer 56. A liquid mixture of phosphoric acid and sulfuric acid is employed for the etchant solution. The temperature of the etchant solution is preferably equal to or lower than 200 degree C., and more preferably equal to or less than 180 degree C.

    摘要翻译： 根据本发明，可以蚀刻高k膜以提供期望的几何形状而不损坏硅基底材料。 通过热氧化在硅衬底50上形成氧化硅膜52，并且在其上形成包括HfSiO x的高介电常数绝缘膜54。 此后，通过干蚀刻通过抗蚀剂层58的掩模来分阶段地去除多晶硅层56和高介电常数绝缘膜54，随后，高介电常数绝缘膜54和氧化硅膜的残留部分 52通过湿蚀刻被选择性地通过多晶硅层56的掩模去除。 对于蚀刻剂溶液使用磷酸和硫酸的液体混合物。 蚀刻剂溶液的温度优选等于或低于200℃，更优选等于或小于180℃。

    Semiconductor washing solution and method of producing semiconductor device using the same
    4.
    发明授权
    Semiconductor washing solution and method of producing semiconductor device using the same 失效
    半导体洗涤液及其制造方法

    公开(公告)号：US07141121B2

    公开(公告)日：2006-11-28

    申请号：US10440762

    申请日：2003-05-19

    申请人： Hidemitsu Aoki

    发明人： Hidemitsu Aoki

    IPC分类号： B08B3/08 ,  B08B3/12

    CPC分类号： C11D11/0047 ,  C11D3/2075 ,  C11D3/3947 ,  C11D7/06 ,  H01L21/02063

    摘要： The invention provides a semiconductor washing solution which can suppress occurrence of variation of the shape of a semiconductor device when the semiconductor device is washed and can maintain a stabilized washing capacity for a long period of time. An organic acid ammonium salt is added to a mixed solution of ammonium hydroxide, hydrogen peroxide and water (NH4OH:H2O2:H2O) to prepare the semiconductor washing solution. The organic acid ammonium salt to be added is one or more selected from ammonium acetate, ammonium citrate, ammonium formate and ammonium oxalate. The concentration of the added organic acid ammonium salt ranges from 0.1 mol/l to 20 mol/l.

    摘要翻译： 本发明提供一种半导体洗涤液，其可以抑制半导体器件洗涤时半导体器件的形状的变化，并能够长期保持稳定的洗涤能力。 将有机酸铵盐加入到氢氧化铵，过氧化氢和水的混合溶液中（NH 3 OH:H 2 O 2）： H 2 O）以制备半导体洗涤溶液。 待加入的有机酸铵盐是选自乙酸铵，柠檬酸铵，甲酸铵和草酸铵中的一种或多种。 加入的有机酸铵盐的浓度为0.1mol / l至20mol / l。

    Etching and cleaning methods and etching and cleaning apparatuses used therefor
    5.
    发明授权
    Etching and cleaning methods and etching and cleaning apparatuses used therefor 有权
    蚀刻和清洁方法以及用于其的蚀刻和清洁装置

    公开(公告)号：US06964724B2

    公开(公告)日：2005-11-15

    申请号：US10665148

    申请日：2003-09-22

    申请人： Shinya Yamasaki ,  Hidemitsu Aoki

    发明人： Shinya Yamasaki ,  Hidemitsu Aoki

    IPC分类号： B08B3/02 ,  B08B3/08 ,  C23F1/00 ,  C23F1/08 ,  C23F1/18 ,  C23F1/26 ,  C23G3/00 ,  H01L21/00 ,  H01L21/02 ,  H01L21/304 ,  H01L21/306 ,  H01L21/308 ,  H01L21/321 ,  H01L21/3213 ,  H01L21/687 ,  B08B3/00 ,  C23C1/00

    CPC分类号： C23F1/26 ,  B08B3/02 ,  C23F1/08 ,  C23F1/18 ,  C23G3/00 ,  H01L21/02063 ,  H01L21/02074 ,  H01L21/02087 ,  H01L21/0209 ,  H01L21/30604 ,  H01L21/32134 ,  H01L21/67023 ,  H01L21/67051 ,  H01L21/6708 ,  H01L21/68707

    摘要： An etching/cleaning apparatus is provided, which makes it possible to effectively remove an unnecessary material or materials existing on a semiconductor wafer without damaging the device area with good controllability. The apparatus comprises (a) a rotating means for holding a semiconductor wafer and for rotating the wafer in a horizontal plane; the wafer having a device area and a surface peripheral area on its surface; the surface peripheral area being located outside the device area; and (b) an edge nozzle for emitting an etching/cleaning liquid toward a surface peripheral area of the wafer. The etching/cleaning liquid emitted from the edge nozzle selectively removes an unnecessary material existing in the surface peripheral area. The etching/cleaning liquid emitted from the edge nozzle preferably has an emission direction oriented along a rotation direction of the wafer or outward with respect to a tangent of the wafer formed near a contact point of the liquid with the surface peripheral area of the wafer. A back nozzle may be additionally provided to emit an etching/cleaning liquid toward a back center of the wafer. A surface nozzle may be additionally provided to emit a protecting liquid toward a surface center of the wafer, covering the device area to protect the same against the etching/cleaning liquid.

    摘要翻译： 提供了一种蚀刻/清洁装置，这使得可以有效地去除存在于半导体晶片上的不需要的材料或材料，而不会损害具有良好可控性的装置区域。 该装置包括：（a）用于保持半导体晶片并用于在水平面内旋转晶片的旋转装置; 所述晶片在其表面上具有器件面积和表面周边区域; 表面周边区域位于装置区域外部; 和（b）用于向晶片的表面周边区域喷射蚀刻/清洗液体的边缘喷嘴。 从边缘喷嘴排出的蚀刻/清洗液选择性地去除表面周边区域中存在的不需要的材料。 从边缘喷嘴排出的蚀刻/清洗液优选具有沿着晶片的旋转方向取向的发射方向或者相对于在液晶与晶片的表面周边区域的接触点附近形成的晶片的切线。 可以另外设置背喷嘴以朝向晶片的后中心发射蚀刻/清洁液体。 可以另外设置表面喷嘴以朝向晶片的表面中心发射保护液体，覆盖设备区域以保护其免受蚀刻/清洁液体的影响。

    Chemical solution treatment apparatus for semiconductor substrate
    8.
    发明授权
    Chemical solution treatment apparatus for semiconductor substrate 失效
    半导体基板用化学溶液处理装置

    公开(公告)号：US06877518B2

    公开(公告)日：2005-04-12

    申请号：US10309132

    申请日：2002-12-04

    申请人： Kaori Watanabe ,  Hidemitsu Aoki ,  Norio Ishikawa ,  Kiyoto Mori

    发明人： Kaori Watanabe ,  Hidemitsu Aoki ,  Norio Ishikawa ,  Kiyoto Mori

    IPC分类号： C23F1/08 ,  C23F1/30 ,  H01L21/00 ,  H01L21/304 ,  B08B15/00

    CPC分类号： H01L21/6708 ,  Y10S134/902

    摘要： A chemical solution treatment apparatus for dissolving and removing ruthenium-based metal adhering to a substrate by a chemical solution, includes: a chemical solution treatment unit; a reservoir unit; and a chemical solution circulation system. The chemical solution inside treatment unit comprises a chemical solution supplying nozzle, and a recovering mechanism. The reservior unit has a structure having a clearence part to be in contact with the chemical solution so that gas components derived from the ruthenium-based metal dissolved and removed in said chemical solution treatment are volatilized outside the chemical solution during circulation of the chemical solution, and comprises an exhaust duct.

    摘要翻译： 一种用于通过化学溶液溶解和去除附着在基底上的钌基金属的化学溶液处理设备，包括：化学溶液处理单元; 水库单元; 和化学溶液循环系统。 处理单元中的化学溶液包括化学溶液供应喷嘴和回收机构。 储液器单元具有与化学溶液接触的清洁部分的结构，使得在所述化学溶液处理中溶解和除去的衍生自钌基金属的气体成分在化学溶液循环期间在化学溶液的外部挥发， 并且包括排气管。

    Semiconductor device and method of manufacturing the same capable of reducing deterioration of low dielectric constant film
    9.
    发明授权
    Semiconductor device and method of manufacturing the same capable of reducing deterioration of low dielectric constant film 失效
    具有能够降低低介电常数膜劣化的半导体装置及其制造方法

    公开(公告)号：US06624061B2

    公开(公告)日：2003-09-23

    申请号：US09311999

    申请日：1999-05-14

    申请人： Hidemitsu Aoki

    发明人： Hidemitsu Aoki

    IPC分类号： H01L214763

    CPC分类号： H01L23/5222 ,  H01L21/76802 ,  H01L21/76814 ,  H01L21/76831 ,  H01L23/5226 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

    摘要： In a semiconductor device, a wiring line layer is formed on a substrate. A dielectric constant film is formed on the wiring line layer. An upper protection film is formed on an entire portion of the dielectric constant film. An opening portion is formed through the upper protection film and the dielectric constant film to the wiring line layer. A conductor buried portion formed into the opening portion. The dielectric constant film has a smaller dielectric constant value than those of a silicon oxide film and silicon nitride film. Also, a side protection film may be formed on all side portions of the opening portion.

    摘要翻译： 在半导体装置中，在基板上形成布线层。 在布线层上形成介电常数膜。 在介电常数膜的整个部分上形成上保护膜。 通过上保护膜和介电常数膜形成到布线层的开口部。 形成在开口部的导体埋入部。 介电常数膜的介电常数值比氧化硅膜和氮化硅膜的介电常数值小。 此外，侧保护膜可以形成在开口部分的所有侧部上。

    Method for cleaning a substrate and cleaning solution
    10.
    发明授权
    Method for cleaning a substrate and cleaning solution 有权
    清洗基材和清洗液的方法

    公开(公告)号：US06319801B1

    公开(公告)日：2001-11-20

    申请号：US09201137

    申请日：1998-11-30

    申请人： Tomoko Wake ,  Hidemitsu Aoki

    发明人： Tomoko Wake ,  Hidemitsu Aoki

    IPC分类号： H01L21302

    CPC分类号： C11D7/265 ,  C11D11/0047 ,  H01L21/02071 ,  H01L21/28061 ,  H01L29/4941 ,  Y10S438/906

    摘要： A method for cleaning a substrate having a patterned metal layer formed thereon includes the step of removing metallic contaminants from the substrate by use of an aqueous solution of carboxylic acid having a chelating action. The aqueous solution contains one of water-soluble carboxylic acid, ammonium carboxylate, and carboxylic acid having an amino group and the the water-soluble carboxylic acid is one of acetic acid, formic acid, citric acid, and oxalic acid. The patterned metal layer is made of one of a transition metal and a compound of a transition metal with one of Si (silicon), N (nitrogen) and O (oxygen).

    摘要翻译： 用于清洁其上形成有图案化金属层的基板的方法包括通过使用具有螯合作用的羧酸水溶液从基材除去金属污染物的步骤。 水溶液含有水溶性羧酸，羧酸铵和具有氨基的羧酸，水溶性羧酸是乙酸，甲酸，柠檬酸，草酸之一。 图案化的金属层由过渡金属和具有Si（硅），N（氮）和O（氧）之一的过渡金属的化合物中的一种制成。