发明授权
- 专利标题: Method for fine pattern formation
- 专利标题(中): 精细图案形成的方法
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申请号: US10088685申请日: 2002-03-21
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公开(公告)号: US06767473B2公开(公告)日: 2004-07-27
- 发明人: Hiroyuki Fujita , Yoshio Mita , Ryoichi Ohigashi , Katsunori Tsuchiya
- 申请人: Hiroyuki Fujita , Yoshio Mita , Ryoichi Ohigashi , Katsunori Tsuchiya
- 优先权: JP2000-220410 20000721; JP2000-220420 20000721; JP2000-220421 20000721; JP2001-10188 20010118
- 主分类号: G01D1500
- IPC分类号: G01D1500
摘要:
There are provided an apparatus for fine pattern formation, which can form a fine pattern with high accuracy by direct writing with ink, a production process of fine nozzles provided in the apparatus for fine pattern formation, and a method for fine pattern formation. Fine pattern formation with high accuracy could have been realized by the apparatus for fine pattern formation, comprising: a silicon substrate; a plurality of fine holes which extend through the silicon substrate from the surface of the silicon substrate to the back surface of the silicon substrate and have a silicon oxide layer on the wall surface thereof; fine nozzles which are protruded, integrally with the silicon oxide layer, on the back surface side of the silicon substrate from each opening of the fine holes; a silicon nitride layer provided on the surface and side of the silicon substrate; a support member provided on the surface side of the silicon substrate; an ink passage for supplying ink to the opening of each fine hole on the surface side of the silicon substrate; and an ink supplying device connected to the ink passage.
公开/授权文献
- US20020166232A1 Method for fine pattern formation 公开/授权日:2002-11-14