Invention Grant
- Patent Title: Method of forming CVD titanium film
- Patent Title (中): 形成CVD钛膜的方法
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Application No.: US09984383Application Date: 2001-10-30
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Publication No.: US06767812B2Publication Date: 2004-07-27
- Inventor: Kazuhide Abe , Yusuke Harada
- Applicant: Kazuhide Abe , Yusuke Harada
- Priority: JP2001-180039 20010614
- Main IPC: H01L2128
- IPC: H01L2128
Abstract:
Before deposition of a CVD titanium film on a cobalt silicide layer, an element which reacts with titanium is provided in the cobalt silicide layer in advance. Thereafter, the CVD titanium film is deposited on the cobalt silicide using a titanium tetrachloride gas.
Public/Granted literature
- US20020192374A1 Method of forming CVD titanium film Public/Granted day:2002-12-19
Information query
