- 专利标题： Method of fabricating a gate structure of a field effect transistor using an alpha-carbon mask
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申请号： US10338251申请日： 2003-01-06
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公开(公告)号： US06767824B2公开(公告)日： 2004-07-27
- 发明人: Padmapani C. Nallan , Ajay Kumar , Guangxiang Jin , Wei Liu
- 申请人： Padmapani C. Nallan , Ajay Kumar , Guangxiang Jin , Wei Liu
- 主分类号： H01L214763
- IPC分类号： H01L214763
摘要：
A method of fabricating a gate structure of a field effect transistor comprising processes of forming an &agr;-carbon mask and plasma etching a gate electrode and a gate dielectric using the &agr;-carbon mask. In one embodiment, the gate dielectric comprises hafnium dioxide.
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