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17 条记录 (耗时 0.032 秒)

    Method of preventing short circuits in magnetic film stacks
    2.
    发明授权
    Method of preventing short circuits in magnetic film stacks 失效
    防止磁性薄膜堆叠短路的方法

    公开(公告)号：US06893893B2

    公开(公告)日：2005-05-17

    申请号：US10235100

    申请日：2002-09-04

    申请人： Padmapani C. Nallan ,  Ajay Kumar ,  Jeng H. Hwang ,  Guangxiang Jin ,  Ralph Kerns

    发明人： Padmapani C. Nallan ,  Ajay Kumar ,  Jeng H. Hwang ,  Guangxiang Jin ,  Ralph Kerns

    IPC分类号： H01L21/00 ,  H01L23/00 ,  H01L43/12

    CPC分类号： H01L23/564 ,  H01L21/67069 ,  H01L43/12 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method for preventing electrical short circuits in a multi-layer magnetic film stack comprises providing a film stack that includes a layer of magnetic material having an exposed surface. A protective layer is deposited on the exposed surface of the magnetic layer. The protective layer may comprise, for example, a fluorocarbon or a hydrofluorocarbon. The film stack is etched and the protective layer protects the exposed surface from a conductive residue produced while etching the film stack. The method may be used in film stacks to form a magneto-resistive random access memory (MRAM) device.

    摘要翻译： 一种用于防止多层磁性膜堆叠中的电短路的方法包括提供包括具有暴露表面的磁性材料层的膜堆叠。 保护层沉积在磁性层的暴露表面上。 保护层可以包括例如碳氟化合物或氢氟烃。 蚀刻薄膜叠层并且保护层保护暴露的表面免受在蚀刻薄膜叠层时产生的导电残留物。 该方法可以用于膜堆叠中以形成磁阻随机存取存储器（MRAM）装置。

    Method of etching metals with high selectivity to hafnium-based dielectric materials
    6.
    发明申请
    Method of etching metals with high selectivity to hafnium-based dielectric materials 审中-公开
    以铪基电介质材料高选择性蚀刻金属的方法

    公开(公告)号：US20060060565A9

    公开(公告)日：2006-03-23

    申请号：US10418994

    申请日：2003-04-17

    申请人： Padmapani Nallan ,  Ajay Kumar ,  Guangxiang Jin

    发明人： Padmapani Nallan ,  Ajay Kumar ,  Guangxiang Jin

    IPC分类号： C23F1/00 ,  B44C1/22 ,  C03C15/00 ,  C03C25/68

    CPC分类号： H01L21/31116 ,  C23F4/00 ,  H01L21/32137

    摘要： A method of plasma etching a metal layer (e.g., titanium (Ti), tantalum (Ta), tungsten (W), and the like) or a metal-containing layer (e.g., tantalum silicon nitride (TaSiN), titanium nitride (TiN), tungsten nitride (WN), and the like) formed on a hafnium-based dielectric material is disclosed. The metal/metal-containing layer is etched using a gas mixture comprising a halogen-containing gas and a fluorine-containing gas. The fluorine within the gas mixture provides a high etch selectivity for the hafnium-based dielectric material.

    摘要翻译： 金属层（例如钛（Ti），钽（Ta），钨（W）等）等等离子体蚀刻或金属含有层（例如，钽氮化硅（TaSiN），氮化钛 ），氮化钨（WN）等）形成在铪基电介质材料上。 使用包含含卤素气体和含氟气体的气体混合物来蚀刻含金属/含金属层。 气体混合物中的氟提供了对铪基电介质材料的高蚀刻选择性。

    Etch methods to form anisotropic features for high aspect ratio applications
    9.
    发明授权
    Etch methods to form anisotropic features for high aspect ratio applications 失效
    蚀刻方法来形成高纵横比应用的各向异性特征

    公开(公告)号：US07368394B2

    公开(公告)日：2008-05-06

    申请号：US11363834

    申请日：2006-02-27

    申请人： Meihua Shen ,  Uwe Leucke ,  Guangxiang Jin ,  Xikun Wang ,  Wei Liu ,  Scott Williams

    发明人： Meihua Shen ,  Uwe Leucke ,  Guangxiang Jin ,  Xikun Wang ,  Wei Liu ,  Scott Williams

    IPC分类号： H01L21/461 ,  H01L21/302

    CPC分类号： H01L21/76802 ,  H01L21/32137 ,  H01L21/76814

    摘要： Methods for forming anisotropic features for high aspect ratio application in etch process are provided in the present invention. The methods described herein advantageously facilitates profile and dimension control of features with high aspect ratios through a sidewall passivation management scheme. In one embodiment, sidewall passivations are managed by selectively forming an oxidation passivation layer on the sidewall and/or bottom of etched layers. In another embodiment, sidewall passivation is managed by periodically clearing the overburden redeposition layer to preserve an even and uniform passivation layer thereon. The even and uniform passivation allows the features with high aspect ratios to be incrementally etched in a manner that pertains a desired depth and vertical profile of critical dimension in both high and low feature density regions on the substrate without generating defects and/or overetching the underneath layers.

    摘要翻译： 在本发明中提供了用于在蚀刻工艺中形成用于高纵横比应用的各向异性特征的方法。 本文描述的方法通过侧壁钝化管理方案有利地促进具有高纵横比的特征的轮廓和尺寸控制。 在一个实施例中，通过在蚀刻层的侧壁和/或底部选择性地形成氧化钝化层来管理侧壁钝化。 在另一个实施例中，通过周期性地清除覆盖层再沉积层以在其上保持均匀且均匀的钝化层来管理侧壁钝化。 均匀和均匀的钝化允许以在衬底上的高和低特征密度区域中具有临界尺寸的期望深度和垂直分布的方式来逐渐蚀刻具有高纵横比的特征，而不产生缺陷和/或过蚀刻下面 层。

    ETCH METHODS TO FORM ANISOTROPIC FEATURES FOR HIGH ASPECT RATIO APPLICATIONS
    10.
    发明申请
    ETCH METHODS TO FORM ANISOTROPIC FEATURES FOR HIGH ASPECT RATIO APPLICATIONS 审中-公开
    ETCH方法形成高度比例应用的各向异性特征

    公开(公告)号：US20080057729A1

    公开(公告)日：2008-03-06

    申请号：US11926531

    申请日：2007-10-29

    申请人： Meihua Shen ,  Uwe Leucke ,  Guangxiang Jin ,  Xikun Wang ,  Wei Liu ,  Scott Williams

    发明人： Meihua Shen ,  Uwe Leucke ,  Guangxiang Jin ,  Xikun Wang ,  Wei Liu ,  Scott Williams

    IPC分类号： H01L21/465

    CPC分类号： H01L21/76802 ,  H01L21/32137 ,  H01L21/76814

    摘要： Methods for forming anisotropic features for high aspect ratio application in etch process are provided in the present invention. The methods described herein advantageously facilitates profile and dimension control of features with high aspect ratios through a sidewall passivation management scheme. In one embodiment, sidewall passivations are managed by selectively forming an oxidation passivation layer on the sidewall and/or bottom of etched layers. In another embodiment, sidewall passivation is managed by periodically clearing the overburden redeposition layer to preserve an even and uniform passivation layer thereon. The even and uniform passivation allows the features with high aspect ratios to be incrementally etched in a manner that pertains a desired depth and vertical profile of critical dimension in both high and low feature density regions on the substrate without generating defects and/or overetching the underneath layers.

    摘要翻译： 在本发明中提供了用于在蚀刻工艺中形成用于高纵横比应用的各向异性特征的方法。 本文描述的方法通过侧壁钝化管理方案有利地促进具有高纵横比的特征的轮廓和尺寸控制。 在一个实施例中，通过在蚀刻层的侧壁和/或底部选择性地形成氧化钝化层来管理侧壁钝化。 在另一个实施例中，通过周期性地清除覆盖层再沉积层以在其上保持均匀且均匀的钝化层来管理侧壁钝化。 均匀和均匀的钝化允许以在衬底上的高和低特征密度区域中具有临界尺寸的期望深度和垂直分布的方式来逐渐蚀刻具有高纵横比的特征，而不产生缺陷和/或过蚀刻下面 层。