发明授权
- 专利标题: High-frequency amplifier
- 专利标题(中): 高频放大器
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申请号: US10220113申请日: 2002-12-04
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公开(公告)号: US06768383B2公开(公告)日: 2004-07-27
- 发明人: Hiroshi Kushitani , Hisayoshi Kato , Michiaki Tsuneoka
- 申请人: Hiroshi Kushitani , Hisayoshi Kato , Michiaki Tsuneoka
- 优先权: JP2000-400451 20001228
- 主分类号: H03F3191
- IPC分类号: H03F3191
摘要:
A bias circuit is provided for attenuating harmonic distortions of a signal having a simple construction and which can be applied to a high-frequency amplifier used in a communication device, such as a mobile telephone. The circuit reduces a voltage drop therein and thus provides a high-frequency amplifier having reduced power consumption and an increased operating efficiency. The high-frequency amplifier includes an amplifier circuit, an output matching circuit, and the bias circuit. In the bias circuit, a parallel circuit including a first transmission line and a first capacitor has one end connected between the amplifier and the output matching circuit. The other end of the parallel circuit is connected to a power source and is grounded via a second capacitor. In the circuit, the bias circuit can be short-circuited in a desired frequency band while being an open circuit in a frequency band of a signal to be amplified, hence attenuating the harmonic distortions without using a low pass filter.
公开/授权文献
- US20040027204A1 High-frequency amplifier 公开/授权日:2004-02-12
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