摘要:
RF amplifiers used in communications systems exhibit backward intermodulation caused by non-linear amplification. Backward intermodulation of the transmit signal and an external signal, which reaches the output of the amplifier through the antenna, results in an unwanted third-order intermodulation product that potentially interferes with the proper reception of the receive signal. The receive sensitivity of the communications system is adversely affected by this unwanted third-order intermodulation product. By mixing a second-order intermodulation component, caused by the same backward intermodulation, with the transmit signal, a compensation signal is created allowing the cancellation of the unwanted third-order intermodulation component.
摘要:
An exciter matching circuit (125), interstage matching circuit (134), and harmonic filter matching circuit (140) match impedances at the input to a two-stage power amplifier (130), between the first stage (132) and the second stage (136) of the power amplifier (130), and at the output of the power amplifier (130) for more than one frequency band of interest. In a GSM/DCS dual band radiotelephone (101), the matching circuits (124, 134, 140) provide low return loss at 900 MHz when the dual band transmitter (110) is operating in the GSM mode. The harmonic filter matching circuit (140) also filters out signals at 1800 MHz, 2700 MHz, and high order harmonics. When the dual band transmitter (110) is in DCS mode, however, the matching circuits (124, 134, 140) provide a low return loss at 1800 MHz and filter out signals at 2700 MHz and harmonics of 1800 MHz.
摘要:
The present invention relates to circuits having differential structure which uses complementary devices for processing single-ended signal. The single-ended differential circuit in accordance with the present invention, comprises first and second complementary devices having first, second, and third terminals, respectively, wherein current flowing from the second terminal to the third terminal has its quantity and direction being varying in dependant on the voltage driven to the first terminal, wherein the currents flowing through the first and second complementary devices vary in opposite relationship. The single-ended differential circuit further comprises an input terminal for driving the first terminals of the first and second complementary devices with a control signal; and biasing means connected to the second and third terminals of the first and second devices, for determining biasing points of the first and second complementary devices such that the first and second devices operates in a differential relationship with respect to a signal driven to the input terminal, wherein the biasing unit determining the biasing points such that one of the first and second devices is substantially active.
摘要:
The present invention relates to circuits having differential structure which uses complementary devices for processing single-ended signal. The single-ended differential circuit in accordance with the present invention, comprises first and second complementary devices having first, second, and third terminals, respectively, wherein current flowing from the second terminal to the third terminal has its quantity and direction being varying in dependant on the voltage driven to the first terminal, wherein the currents flowing through the first and second complementary devices vary in opposite relationship. The single-ended differential circuit further comprises an input terminal for driving the first terminals of the first and second complementary devices with a control signal; and biasing means connected to the second and third terminals of the first and second devices, for determining biasing points of the first and second complementary devices such that the first and second devices operates in a differential relationship with respect to a signal driven to the input terminal, wherein the biasing means determining the biasing points such that one of the first and second devices is substantially active.
摘要:
A high-frequency power amplifier capable of considerably improving the power amplification efficiency (&eegr;). This high-frequency power amplifier 10 comprises an amplifying element 11, an input-side matching circuit 12, and an output-side matching circuit 13, and further has a current absorbing unit 20. This current absorbing unit 20 absorbs the current of a higher-harmonic frequency current contained in a signal of a fundamental wave at which the amplifying element 11 operates. Preferably, this current absorbing unit 20 is comprised of an LC-series resonance circuit 21 having a higher-harmonic frequency as a resonance frequency, and thereby bypasses the above current to the earth.
摘要:
A continuous-time baseline restoration (BLR) circuit providing built-in pulse tail-cancellation, or BLR tail-cancel circuit, in constant fraction discriminator (CFD) arming and timing circuits. The BLR tail cancel circuit is applied at the output of constant fraction timing shaping filters and arming circuits to permit monolithic integrated circuit implementation of CFD circuits operating at high input signal count rates. The BLR tail-cancel circuit provides correction of dc offset and count-rate dependent baseline errors along with simultaneous tail-cancellation. Correction of dc offsets due to electronic device mismatches and count-rate dependent baseline errors is required for accurate time pickoff from the input signals. The reduction of pulse width, or pulse tail-cancellation is required to shorten the duration of high count rate signals to prevent the severe distortion caused by the occurrence a new signal superimposed on the tails of previous signals, a condition known as pulse pileup. Without pulse tail-cancellation, there are substantial errors in time pickoff due to the pulse pileup.
摘要:
A bias circuit is provided for attenuating harmonic distortions of a signal having a simple construction and which can be applied to a high-frequency amplifier used in a communication device, such as a mobile telephone. The circuit reduces a voltage drop therein and thus provides a high-frequency amplifier having reduced power consumption and an increased operating efficiency. The high-frequency amplifier includes an amplifier circuit, an output matching circuit, and the bias circuit. In the bias circuit, a parallel circuit including a first transmission line and a first capacitor has one end connected between the amplifier and the output matching circuit. The other end of the parallel circuit is connected to a power source and is grounded via a second capacitor. In the circuit, the bias circuit can be short-circuited in a desired frequency band while being an open circuit in a frequency band of a signal to be amplified, hence attenuating the harmonic distortions without using a low pass filter.
摘要:
A monolithic active frequency selection circuit includes an input presenting a frequency-dependent impedance and a first gain block configured to provide less than unity voltage gain, a high input impedance and a low output impedance. An output of the first amplifier is coupled to the frequency selection circuit input. The frequency selection circuit includes a first phase shifter that, in one aspect, is formed by a first capacitor coupled between the first port and a reference voltage. The frequency selection circuit also includes a second amplifier configured to provide greater than unity voltage gain. The second amplifier has an input coupled to the output of the first amplifier and an output coupled to the input of the first amplifier. The frequency selection circuit further includes a second phase shifter, which may be formed from a capacitor coupled between the output of the second amplifier and a reference voltage. The first and second amplifiers and the first and second phase shifters are coupled in a loop such that the frequency dependence of an impedance presented at the output of the first amplifier emulates the impedance of a parallel RLC tank circuit, providing a Q on the order of ten at a center frequency &ohgr;o, of several hundred megahertz. The output of the second amplifier may be used to provide a high Q, tuned transimpedance amplification function relative to the input.
摘要:
An internally impedance matched transistor circuit prevents low frequency oscillation during high frequency band operation. Field effect transistors and corresponding oscillation-preventing stabilization circuits are located in the same package with the stabilization circuits close to the corresponding field effect transistors. Each oscillation-preventing stabilization circuit includes a resistor and a capacitor connected in series.
摘要:
A high-frequency power amplifier for feeding an antenna of a nuclear magnetic resonance tomography apparatus has at least one amplifier stage that can emit a maximum output power within a first frequency band. Circuitry for frequency-dependently altering the maximum output power is connected to the amplifier stage, whereby the maximum output power within a second frequency band, that is higher than the first frequency band is higher than within the first frequency band.