发明授权
US06768628B2 Method for fabricating an isolated microelectromechanical system (MEMS) device incorporating a wafer level cap
有权
用于制造并入晶片级盖的隔离微机电系统（MEMS）器件的方法
- 专利标题： Method for fabricating an isolated microelectromechanical system (MEMS) device incorporating a wafer level cap
- 专利标题（中）： 用于制造并入晶片级盖的隔离微机电系统（MEMS）器件的方法
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申请号： US09842975申请日： 2001-04-26
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公开(公告)号： US06768628B2公开(公告)日： 2004-07-27
- 发明人: Richard D. Harris , Michael J. Knieser , Robert J. Kretschmann , Mark A. Lucak
- 申请人： Richard D. Harris , Michael J. Knieser , Robert J. Kretschmann , Mark A. Lucak
- 主分类号： H01G500
- IPC分类号： H01G500
摘要：
A MEMS structure is provided having a cap that encapsulates and protects the fragile components of the device, while having an electrical trace embedded in a nonconductive substrate. The electrical trace includes a first terminal end that is exposed to the peripheral region of the device, and a second end that is connected to the MEMS structure to facilitate operation of the device.
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