发明授权
- 专利标题： Method of programming and reading a dual cell memory device
- 专利标题（中）： 编程和读取双单元存储器件的方法
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申请号： US10422276申请日： 2003-04-24
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公开(公告)号： US06768673B1公开(公告)日： 2004-07-27
- 发明人: Edward Hsia , Darlene Hamilton , Kulachet Tanpairoj , Mimi Lee , Alykhan F. Madhani , Yi He
- 申请人： Edward Hsia , Darlene Hamilton , Kulachet Tanpairoj , Mimi Lee , Alykhan F. Madhani , Yi He
- 主分类号： G11C1604
- IPC分类号： G11C1604
摘要：
A method of programming and reading a dual cell memory device. The method includes storing a selected program level in each cell and reading one of the cells to determine a single data value stored by the memory device.
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