发明授权
US06768698B2 Semiconductor memory device with internal clock generation circuit
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具有内部时钟发生电路的半导体存储器件
- 专利标题: Semiconductor memory device with internal clock generation circuit
- 专利标题(中): 具有内部时钟发生电路的半导体存储器件
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申请号: US10255667申请日: 2002-09-27
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公开(公告)号: US06768698B2公开(公告)日: 2004-07-27
- 发明人: Takashi Kono
- 申请人: Takashi Kono
- 优先权: JP2002-093397 20020329
- 主分类号: G11C722
- IPC分类号: G11C722
摘要:
A repeater receives an internal clock distributed from a DLL circuit irrespective of a data reading operation and outputs a DLL clock to a data output circuit and a data strobe signal output circuit in response to an internal signal only in the data reading operation. The data strobe signal output circuit receives the internal clock and the DLL clock, generates a data strobe signal in synchronization with the internal clock, and outputs the generated data strobe signal in synchronization with the DLL clock. As a result, a semiconductor memory device attains further reduction of power consumption during active-standby and a secure supply of the internal clock to a prescribed circuit.
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