发明授权
US06770566B1 Methods of forming semiconductor structures, and articles and devices formed thereby
有权
形成半导体结构的方法以及由此形成的制品和装置
- 专利标题： Methods of forming semiconductor structures, and articles and devices formed thereby
- 专利标题（中）： 形成半导体结构的方法以及由此形成的制品和装置
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申请号： US10151127申请日： 2002-05-16
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公开(公告)号： US06770566B1公开(公告)日： 2004-08-03
- 发明人: Yongchul Ahn , Kaichiu Wong
- 申请人： Yongchul Ahn , Kaichiu Wong
- 主分类号： H01L21302
- IPC分类号： H01L21302
摘要：
A method of forming a semiconductor structure is described that includes etching a first metal layer at the bottom of a via in a first insulating layer to expose a second metal layer, wherein the first metal layer is on the second metal layer, and wherein the etching of the first metal layer is not reactive-ion etching. Methods of making semiconductor devices and electronic devices are also described.
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