发明授权
- 专利标题： III nitride semiconductor substrate for ELO
- 专利标题（中）： III型氮化物半导体衬底
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申请号： US10163256申请日： 2002-06-05
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公开(公告)号： US06770914B2公开(公告)日： 2004-08-03
- 发明人: Tomohiko Shibata , Keiichiro Asai , Shigeaki Sumiya , Mitsuhiro Tanaka
- 申请人： Tomohiko Shibata , Keiichiro Asai , Shigeaki Sumiya , Mitsuhiro Tanaka
- 优先权： JP2001-178044 20010613
- 主分类号： H01L2922
- IPC分类号： H01L2922
摘要：
A III nitride semiconductor substrate for ELO is provided for forming a III nitride film whose surface is controlled independent of the film's thickness. A III nitride underlayer including at least Al is directly formed on a base made of e.g. a sapphire single crystal, and not formed through a buffer layer formed at a low temperature. After that patterns made of e.g SiO2 are formed on the underlayer.
公开/授权文献
- US20020192959A1 III nitride semiconductor substrate for ELO 公开/授权日：2002-12-19
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